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Conference Paper: The influence of ion implantation on the off-state leakage characteristics of n-MOSFETs with ultrathin oxide, nitrided-oxide and re-oxidized nitrided-oxide gate dielectrics
Title | The influence of ion implantation on the off-state leakage characteristics of n-MOSFETs with ultrathin oxide, nitrided-oxide and re-oxidized nitrided-oxide gate dielectrics |
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Authors | |
Issue Date | 1993 |
Publisher | IEEE. |
Citation | Proceedings of 3rd IEEE International Conference on VLSI and CAD (ICVC'93), Taejon, Korea, 15-17 November 1993, p. 78-82 How to Cite? |
Persistent Identifier | http://hdl.handle.net/10722/204136 |
DC Field | Value | Language |
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dc.contributor.author | Fleischer, S | - |
dc.contributor.author | Lai, PT | - |
dc.contributor.author | Cheng, YC | - |
dc.date.accessioned | 2014-09-19T20:06:36Z | - |
dc.date.available | 2014-09-19T20:06:36Z | - |
dc.date.issued | 1993 | - |
dc.identifier.citation | Proceedings of 3rd IEEE International Conference on VLSI and CAD (ICVC'93), Taejon, Korea, 15-17 November 1993, p. 78-82 | - |
dc.identifier.uri | http://hdl.handle.net/10722/204136 | - |
dc.language | eng | - |
dc.publisher | IEEE. | - |
dc.relation.ispartof | International Conference on VLSI and CAD Proceedings | - |
dc.rights | International Conference on VLSI and CAD Proceedings. Copyright © IEEE. | - |
dc.title | The influence of ion implantation on the off-state leakage characteristics of n-MOSFETs with ultrathin oxide, nitrided-oxide and re-oxidized nitrided-oxide gate dielectrics | - |
dc.type | Conference_Paper | - |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
dc.identifier.email | Cheng, YC: yccheng@hkucc.hku.hk | - |
dc.identifier.authority | Lai, PT=rp00130 | - |
dc.identifier.hkuros | 240601 | - |
dc.identifier.spage | 78 | - |
dc.identifier.epage | 82 | - |
dc.publisher.place | United States | - |