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Conference Paper: On recovery of hot-carrier-induced mobility degradationin off-state thermally-nitrided-oxide N-MOSFET's

TitleOn recovery of hot-carrier-induced mobility degradationin off-state thermally-nitrided-oxide N-MOSFET's
Authors
Ma, ZJLai, PTHuang, MQCheng, YCLiu, BY
Issue Date1992
Citation
The 3rd International Conference on Solid State and Integrated Circuit Technology, Beijing, China, 1992, In Conference Proceedings, 1992, p. 649-651 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/204130

 

DC FieldValueLanguage
dc.contributor.authorMa, ZJen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorHuang, MQen_US
dc.contributor.authorCheng, YCen_US
dc.contributor.authorLiu, BYen_US
dc.date.accessioned2014-09-19T20:06:29Z-
dc.date.available2014-09-19T20:06:29Z-
dc.date.issued1992en_US
dc.identifier.citationThe 3rd International Conference on Solid State and Integrated Circuit Technology, Beijing, China, 1992, In Conference Proceedings, 1992, p. 649-651en_US
dc.identifier.urihttp://hdl.handle.net/10722/204130-
dc.languageengen_US
dc.relation.ispartofProceedings of the 3rd International Conference on Solid State and Integrated Circuit Technologyen_US
dc.titleOn recovery of hot-carrier-induced mobility degradationin off-state thermally-nitrided-oxide N-MOSFET'sen_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.emailCheng, YC: yccheng@hkucc.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.identifier.hkuros240587en_US
dc.identifier.spage649-
dc.identifier.epage651-

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