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Article: Universal transport properties of three-dimensional topological insulator nanowires

TitleUniversal transport properties of three-dimensional topological insulator nanowires
Authors
Issue Date2014
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B, 2014, v. 89 n. 24, p. article no. 245107:1-9 How to Cite?
AbstractWe report theoretical calculations of electronic and transport properties mediated by topological helical states on the walls of three-dimensional topological insulator (TI) nanowires. A universal regime of quantized conductance and fluctuations is found that is induced by disorder. The average conductance of the disordered nanowire scales as a function of the number of transmission channels N in a universal form = independent of the system details. For instance, for Bi2Se3 nanowires cleaved along the x or y direction with the quintuple layers along the z direction =(5/12)N+1/2. The universal and quantized behavior is due to the topological physics happening on the walls of the nanowire under the influence of disorder. © 2014 American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/203312
ISSN
2014 Impact Factor: 3.736
2015 SCImago Journal Rankings: 1.933
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZhang, Len_US
dc.contributor.authorZhuang, Jen_US
dc.contributor.authorXing, Yen_US
dc.contributor.authorLi, Jen_US
dc.contributor.authorWang, Jen_US
dc.contributor.authorGuo, Hen_US
dc.date.accessioned2014-09-19T14:03:14Z-
dc.date.available2014-09-19T14:03:14Z-
dc.date.issued2014en_US
dc.identifier.citationPhysical Review B, 2014, v. 89 n. 24, p. article no. 245107:1-9en_US
dc.identifier.issn1098-0121-
dc.identifier.urihttp://hdl.handle.net/10722/203312-
dc.description.abstractWe report theoretical calculations of electronic and transport properties mediated by topological helical states on the walls of three-dimensional topological insulator (TI) nanowires. A universal regime of quantized conductance and fluctuations is found that is induced by disorder. The average conductance of the disordered nanowire scales as a function of the number of transmission channels N in a universal form = independent of the system details. For instance, for Bi2Se3 nanowires cleaved along the x or y direction with the quintuple layers along the z direction =(5/12)N+1/2. The universal and quantized behavior is due to the topological physics happening on the walls of the nanowire under the influence of disorder. © 2014 American Physical Society.-
dc.languageengen_US
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_US
dc.relation.ispartofPhysical Review Ben_US
dc.rightsPhysical Review B. Copyright © American Physical Society.en_US
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleUniversal transport properties of three-dimensional topological insulator nanowiresen_US
dc.typeArticleen_US
dc.identifier.emailZhang, L: h0792061@hku.hken_US
dc.identifier.emailZhuang, J: jnzhuang@hku.hken_US
dc.identifier.emailXing, Y: xingyx@hku.hken_US
dc.identifier.emailWang, J: jianwang@hku.hken_US
dc.identifier.emailGuo, H: guohku@hku.hken_US
dc.identifier.authorityXing, Y=rp00819en_US
dc.identifier.authorityWang, J=rp00799en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1103/PhysRevB.89.245107en_US
dc.identifier.scopuseid_2-s2.0-84902198287-
dc.identifier.hkuros240125en_US
dc.identifier.volume89en_US
dc.identifier.spage245107:1en_US
dc.identifier.epage245107:9en_US
dc.identifier.isiWOS:000342234700002-
dc.publisher.placeNew Yorken_US

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