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Article: Effects of Ta incorporation in La2O3 gate dielectric of InGaZnO thin-film transistor

TitleEffects of Ta incorporation in La2O3 gate dielectric of InGaZnO thin-film transistor
Authors
Issue Date2014
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2014, vol. 104 n. 2, article no. 123505 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/202931

 

DC FieldValueLanguage
dc.contributor.authorQIAN, Len_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2014-09-19T10:10:40Z-
dc.date.available2014-09-19T10:10:40Z-
dc.date.issued2014en_US
dc.identifier.citationApplied Physics Letters, 2014, vol. 104 n. 2, article no. 123505en_US
dc.identifier.urihttp://hdl.handle.net/10722/202931-
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/-
dc.relation.ispartofApplied Physics Lettersen_US
dc.rightsCopyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2014, vol. 104 n. 2, article no. 123505 and may be found at http://scitation.aip.org/content/aip/journal/apl/104/12/10.1063/1.4869761-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleEffects of Ta incorporation in La2O3 gate dielectric of InGaZnO thin-film transistoren_US
dc.typeArticleen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4869761-
dc.identifier.hkuros240560en_US
dc.identifier.volume104en_US
dc.identifier.spage123505-1en_US
dc.identifier.epage123505-5en_US

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