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Article: A comparison study on hydrogen sensing performance of MoO3 nanoplatelets coated with a thin layer of Ta2O5 or La2O3

TitleA comparison study on hydrogen sensing performance of MoO3 nanoplatelets coated with a thin layer of Ta2O5 or La2O3
Authors
Issue Date2014
PublisherTamkang University. The Journal's web site is located at http://www.airiti.com/teps/ec/ecJnlIntro.aspx?jnlcattype=1&jnlptype=4&jnltype=25&Jnliid=3231&newIssueiid=154581
Citation
Journal of Applied Science and Engineering, 2014, vol. 17 n. 1, p. pp. 31-38 How to Cite?
AbstractThere has been significant interest in developing metal oxide films with high surface area-to-volume ratio nanostructures particularly in substantially increasing the performance of Pt/oxide/semiconductor Schottky-diode gas sensors. While retaining the surface morphology of these devices, they can be further improved by modifying their nanostructured surface with a thin metal oxide layer. In this work, we analyse and compare the electrical and hydrogen-sensing properties of MoO3 nanoplatelets coated with a 4 nm layer of tantalum oxide (Ta2O5) or lanthanum oxide (La2O3). We explain in our study, that the presence of numerous defect traps at the surface (and the bulk) of the thin high-k layer causes a substantial trapping of charge during hydrogen adsorption. As a result, the interface between the Pt electrode and the thin oxide layer becomes highly polarised. Measurement results also show that the nanoplatelets coated with Ta2O5 can enable the device to be more sensitive (a larger voltage shift under hydrogen exposure) than those coated with La2O3.
Persistent Identifierhttp://hdl.handle.net/10722/202930

 

DC FieldValueLanguage
dc.contributor.authorYu, JCWen_US
dc.contributor.authorLiu, Y.en_US
dc.contributor.authorCai, F.X.en_US
dc.contributor.authorShafiei, M.en_US
dc.contributor.authorCHEN, Gen_US
dc.contributor.authorMotta, N.en_US
dc.contributor.authorWlodarski, W.en_US
dc.contributor.authorKalantar-zadeh, K.en_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2014-09-19T10:10:40Z-
dc.date.available2014-09-19T10:10:40Z-
dc.date.issued2014en_US
dc.identifier.citationJournal of Applied Science and Engineering, 2014, vol. 17 n. 1, p. pp. 31-38en_US
dc.identifier.urihttp://hdl.handle.net/10722/202930-
dc.description.abstractThere has been significant interest in developing metal oxide films with high surface area-to-volume ratio nanostructures particularly in substantially increasing the performance of Pt/oxide/semiconductor Schottky-diode gas sensors. While retaining the surface morphology of these devices, they can be further improved by modifying their nanostructured surface with a thin metal oxide layer. In this work, we analyse and compare the electrical and hydrogen-sensing properties of MoO3 nanoplatelets coated with a 4 nm layer of tantalum oxide (Ta2O5) or lanthanum oxide (La2O3). We explain in our study, that the presence of numerous defect traps at the surface (and the bulk) of the thin high-k layer causes a substantial trapping of charge during hydrogen adsorption. As a result, the interface between the Pt electrode and the thin oxide layer becomes highly polarised. Measurement results also show that the nanoplatelets coated with Ta2O5 can enable the device to be more sensitive (a larger voltage shift under hydrogen exposure) than those coated with La2O3.-
dc.languageengen_US
dc.publisherTamkang University. The Journal's web site is located at http://www.airiti.com/teps/ec/ecJnlIntro.aspx?jnlcattype=1&jnlptype=4&jnltype=25&Jnliid=3231&newIssueiid=154581-
dc.relation.ispartofJournal of Applied Science and Engineeringen_US
dc.titleA comparison study on hydrogen sensing performance of MoO3 nanoplatelets coated with a thin layer of Ta2O5 or La2O3en_US
dc.typeArticleen_US
dc.identifier.emailYu, JCW: jcwyu@hku.hken_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.identifier.doi10.6180/jase.2014.17.1.05-
dc.identifier.hkuros240555en_US
dc.identifier.hkuros229238-
dc.identifier.volumevol. 17en_US
dc.identifier.spagepp. 31en_US
dc.identifier.epage38en_US

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