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Article: Improved Performances Of Metal-Oxide-Nitride-Oxide-Silicon Memory With Hftion as Charge Trapping Layer

TitleImproved Performances Of Metal-Oxide-Nitride-Oxide-Silicon Memory With Hftion as Charge Trapping Layer
Authors
Issue Date2013
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2013, v. 103 n. 21, article no. 213507 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/202924
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorChen, Jen_US
dc.contributor.authorXu, Jen_US
dc.contributor.authorLiu, Len_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2014-09-19T10:10:37Z-
dc.date.available2014-09-19T10:10:37Z-
dc.date.issued2013en_US
dc.identifier.citationApplied Physics Letters, 2013, v. 103 n. 21, article no. 213507en_US
dc.identifier.urihttp://hdl.handle.net/10722/202924-
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/-
dc.relation.ispartofApplied Physics Lettersen_US
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics-
dc.rightsCopyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2013, v. 103 n. 21, article no. 213507 and may be found at http://scitation.aip.org/content/aip/journal/apl/103/21/10.1063/1.4829880-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleImproved Performances Of Metal-Oxide-Nitride-Oxide-Silicon Memory With Hftion as Charge Trapping Layeren_US
dc.typeArticleen_US
dc.identifier.emailChen, J: cjxhk@hku.hken_US
dc.identifier.emailXu, J: jpxu@eee.hku.hken_US
dc.identifier.emailLiu, L: liulu@hku.hken_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityXu, J=rp00197en_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4829880-
dc.identifier.hkuros240524en_US
dc.identifier.volume103en_US
dc.identifier.spage213507-1en_US
dc.identifier.epage213507-4en_US
dc.identifier.isiWOS:000327590400087-

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