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Article: High-Performance Pentacene Thin-Film Transistor With High-κ HfLaON as Gate Dielectric

TitleHigh-Performance Pentacene Thin-Film Transistor With High-κ HfLaON as Gate Dielectric
Authors
Issue Date2013
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Citation
IEEE Electron Device Letters, 2013, v. 34 n. 11, p. 1397-1399 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/202564
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorHan, CYen_US
dc.contributor.authorTang, WMen_US
dc.contributor.authorLeung, CHen_US
dc.contributor.authorChe, CMen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2014-09-19T08:41:10Z-
dc.date.available2014-09-19T08:41:10Z-
dc.date.issued2013en_US
dc.identifier.citationIEEE Electron Device Letters, 2013, v. 34 n. 11, p. 1397-1399en_US
dc.identifier.urihttp://hdl.handle.net/10722/202564-
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55en_US
dc.relation.ispartofIEEE Electron Device Lettersen_US
dc.rightsIEEE Electron Device Letters. Copyright © IEEE.en_US
dc.rights©2013 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_US
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleHigh-Performance Pentacene Thin-Film Transistor With High-κ HfLaON as Gate Dielectricen_US
dc.typeArticleen_US
dc.identifier.emailLeung, CH: chleung@eee.hku.hken_US
dc.identifier.emailChe, CM: cmche@hku.hken_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLeung, CH=rp00146en_US
dc.identifier.authorityChe, CM=rp00670en_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/LED.2013.2281661-
dc.identifier.hkuros236842en_US
dc.identifier.hkuros240515-
dc.identifier.volume34en_US
dc.identifier.spage1397en_US
dc.identifier.epage1399en_US
dc.identifier.isiWOS:000326284100015-
dc.publisher.placeNew York, USAen_US

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