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Article: High-Performance Pentacene Thin-Film Transistor With High-κ HfLaON as Gate Dielectric

TitleHigh-Performance Pentacene Thin-Film Transistor With High-κ HfLaON as Gate Dielectric
Authors
Han, CYTang, WMLeung, CHChe, CMLai, PT
KeywordsFluorination
HfLaON
high-κ dielectric
organic thin-film transistor (OTFT)
Issue Date2013
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Citation
IEEE Electron Device Letters, 2013, v. 34 n. 11, p. 1397-1399 How to Cite?
DOI: http://dx.doi.org/10.1109/LED.2013.2281661
Persistent Identifierhttp://hdl.handle.net/10722/202564
ISSN
0741-3106
2021 Impact Factor: 4.816
2020 SCImago Journal Rankings: 1.337
ISI Accession Number ID
WOS:000326284100015

 

DC FieldValueLanguage
dc.contributor.authorHan, CYen_US
dc.contributor.authorTang, WMen_US
dc.contributor.authorLeung, CHen_US
dc.contributor.authorChe, CMen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2014-09-19T08:41:10Z-
dc.date.available2014-09-19T08:41:10Z-
dc.date.issued2013en_US
dc.identifier.citationIEEE Electron Device Letters, 2013, v. 34 n. 11, p. 1397-1399en_US
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10722/202564-
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55en_US
dc.relation.ispartofIEEE Electron Device Lettersen_US
dc.subjectFluorination-
dc.subjectHfLaON-
dc.subjecthigh-κ dielectric-
dc.subjectorganic thin-film transistor (OTFT)-
dc.titleHigh-Performance Pentacene Thin-Film Transistor With High-κ HfLaON as Gate Dielectricen_US
dc.typeArticleen_US
dc.identifier.emailLeung, CH: chleung@eee.hku.hken_US
dc.identifier.emailChe, CM: cmche@hku.hken_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLeung, CH=rp00146en_US
dc.identifier.authorityChe, CM=rp00670en_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/LED.2013.2281661-
dc.identifier.scopuseid_2-s2.0-84887236747-
dc.identifier.hkuros236842en_US
dc.identifier.hkuros240515-
dc.identifier.volume34en_US
dc.identifier.spage1397en_US
dc.identifier.epage1399en_US
dc.identifier.eissn1558-0563-
dc.identifier.isiWOS:000326284100015-
dc.publisher.placeNew York, USAen_US
dc.identifier.issnl0741-3106-

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