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Article: High-performance pentacene thin-film transistor with ZrLaO gate dielectric passivated by fluorine incorporation

TitleHigh-performance pentacene thin-film transistor with ZrLaO gate dielectric passivated by fluorine incorporation
Authors
Issue Date2013
PublisherElsevier. The Journal's web site is located at http://www.elsevier.com/locate/orgel
Citation
Organic Electronics, 2013, v. 14 n. 11, p. 2973-2979 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/202558

 

DC FieldValueLanguage
dc.contributor.authorHan, Cen_US
dc.contributor.authorQian, Len_US
dc.contributor.authorLeung, CHen_US
dc.contributor.authorChe, CMen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2014-09-19T08:41:04Z-
dc.date.available2014-09-19T08:41:04Z-
dc.date.issued2013en_US
dc.identifier.citationOrganic Electronics, 2013, v. 14 n. 11, p. 2973-2979en_US
dc.identifier.urihttp://hdl.handle.net/10722/202558-
dc.languageengen_US
dc.publisherElsevier. The Journal's web site is located at http://www.elsevier.com/locate/orgelen_US
dc.relation.ispartofOrganic Electronicsen_US
dc.rightsNOTICE: this is the author’s version of a work that was accepted for publication in Organic Electronics. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Organic Electronics, 2013, v. 14 n. 11, p. 2973-2979. DOI: 10.1016/j.orgel.2013.08.018-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleHigh-performance pentacene thin-film transistor with ZrLaO gate dielectric passivated by fluorine incorporationen_US
dc.typeArticleen_US
dc.identifier.emailLeung, CH: chleung@eee.hku.hken_US
dc.identifier.emailChe, CM: cmche@hku.hken_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLeung, CH=rp00146en_US
dc.identifier.authorityChe, CM=rp00670en_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturepostprint-
dc.identifier.doi10.1016/j.orgel.2013.08.018-
dc.identifier.hkuros236535en_US
dc.identifier.hkuros240496-
dc.identifier.volume14en_US
dc.identifier.spage2973en_US
dc.identifier.epage2979en_US
dc.publisher.placeAmsterdam, The Netherlanden_US

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