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Conference Paper: Field-Effect Ferroelectric-Semiconductor Solar Cells

TitleField-Effect Ferroelectric-Semiconductor Solar Cells
Authors
Issue Date2014
PublisherI E E E.
Citation
The IEEE 40th Photovoltaic Specialist Conference (PVSC), Denver, USA, 8-13 June 2014. In I E E E Photovoltaic Specialists Conference. Conference Record, 2014, p. 2542-2544 How to Cite?
AbstractTraditional photovoltaic devices employ limited semiconductor materials largely due to the P-N junction structure. We have developed a new kind of field-effect ferroelectric semiconductor solar cells. Prototype cells have been demonstrated successfully. Substantial photovoltaic effect and rectifying behavior were experimentally observed. In addition, simulation study was conducted to indicate that the induced electric field due to the bound surface changes of the ferroelectric could be extended into the semiconductor. The simulation results are consistent with experimental observations. This unique device structure offers a promising alternative to achieve novel solar cells. The new cells are not P-N junction based, and in principle offer more flexibility in materials selection and optimizing charge generation, separation and collection for achieving high performance solar cells.
Persistent Identifierhttp://hdl.handle.net/10722/201256
ISBN
ISSN

 

DC FieldValueLanguage
dc.contributor.authorWang, Len_US
dc.contributor.authorLiu, Fen_US
dc.contributor.authorLau, CMen_US
dc.contributor.authorWang, Len_US
dc.contributor.authorYang, Gen_US
dc.contributor.authorZheng, Den_US
dc.contributor.authorLi, Zen_US
dc.date.accessioned2014-08-21T07:19:44Z-
dc.date.available2014-08-21T07:19:44Z-
dc.date.issued2014en_US
dc.identifier.citationThe IEEE 40th Photovoltaic Specialist Conference (PVSC), Denver, USA, 8-13 June 2014. In I E E E Photovoltaic Specialists Conference. Conference Record, 2014, p. 2542-2544en_US
dc.identifier.isbn9781479943982-
dc.identifier.issn0160-8371-
dc.identifier.urihttp://hdl.handle.net/10722/201256-
dc.description.abstractTraditional photovoltaic devices employ limited semiconductor materials largely due to the P-N junction structure. We have developed a new kind of field-effect ferroelectric semiconductor solar cells. Prototype cells have been demonstrated successfully. Substantial photovoltaic effect and rectifying behavior were experimentally observed. In addition, simulation study was conducted to indicate that the induced electric field due to the bound surface changes of the ferroelectric could be extended into the semiconductor. The simulation results are consistent with experimental observations. This unique device structure offers a promising alternative to achieve novel solar cells. The new cells are not P-N junction based, and in principle offer more flexibility in materials selection and optimizing charge generation, separation and collection for achieving high performance solar cells.-
dc.languageengen_US
dc.publisherI E E E.-
dc.relation.ispartofI E E E Photovoltaic Specialists Conference. Conference Recorden_US
dc.rightsI E E E Photovoltaic Specialists Conference. Conference Record. Copyright © I E E E.-
dc.rights©2014 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleField-Effect Ferroelectric-Semiconductor Solar Cellsen_US
dc.typeConference_Paperen_US
dc.identifier.emailLiu, F: fordliu@hku.hken_US
dc.identifier.authorityLiu, F=rp01358en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/PVSC.2014.6925448-
dc.identifier.hkuros234324en_US
dc.identifier.spage2542en_US
dc.identifier.epage2544en_US
dc.publisher.placeUnited Statesen_US

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