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Article: Tunneling magnetoresistance in Fe3Si/MgO/Fe3Si(001) magnetic tunnel junctions

TitleTunneling magnetoresistance in Fe3Si/MgO/Fe3Si(001) magnetic tunnel junctions
Authors
Issue Date2014
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2014, v. 104 n. 17, article no. 172406, p. 172406:1-172406:5 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/200804
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorTao, LLen_US
dc.contributor.authorLiang, SHen_US
dc.contributor.authorLiu, DPen_US
dc.contributor.authorWei, HXen_US
dc.contributor.authorWang, Jen_US
dc.contributor.authorHan, XFen_US
dc.date.accessioned2014-08-21T07:01:45Z-
dc.date.available2014-08-21T07:01:45Z-
dc.date.issued2014en_US
dc.identifier.citationApplied Physics Letters, 2014, v. 104 n. 17, article no. 172406, p. 172406:1-172406:5en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/200804-
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_US
dc.rightsCopyright 2014) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2014, v. 104 n. 17, article no. 172406 and may be found at http://scitation.aip.org/content/aip/journal/apl/104/17/10.1063/1.4874837en_US
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleTunneling magnetoresistance in Fe3Si/MgO/Fe3Si(001) magnetic tunnel junctionsen_US
dc.typeArticleen_US
dc.identifier.emailWang, J: jianwang@hku.hken_US
dc.identifier.authorityWang, J=rp00799en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4874837en_US
dc.identifier.hkuros234157en_US
dc.identifier.volume104en_US
dc.identifier.spage172406:1en_US
dc.identifier.epage172406:5en_US
dc.identifier.isiWOS:000336142500049-
dc.publisher.placeUnited Statesen_US

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