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Article: Level-set-based inverse lithography for mask synthesis using the conjugate gradient and an optimal time step

TitleLevel-set-based inverse lithography for mask synthesis using the conjugate gradient and an optimal time step
Authors
Issue Date2013
PublisherAmerican Vacuum Society. The Journal's web site is located at http://avspublications.org/jvstb/
Citation
Journal of Vacuum Science and Technology: Part B Nanotechnology & Microelectronics, 2013, v. 31 n. 4, p. 041605-1-041605-13 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/200624
ISSN
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLv, Wen_US
dc.contributor.authorLiu, Sen_US
dc.contributor.authorXia, Qen_US
dc.contributor.authorWu, Xen_US
dc.contributor.authorShen, Yen_US
dc.contributor.authorLam, EYMen_US
dc.date.accessioned2014-08-21T06:52:44Z-
dc.date.available2014-08-21T06:52:44Z-
dc.date.issued2013en_US
dc.identifier.citationJournal of Vacuum Science and Technology: Part B Nanotechnology & Microelectronics, 2013, v. 31 n. 4, p. 041605-1-041605-13en_US
dc.identifier.issn2166-2746-
dc.identifier.urihttp://hdl.handle.net/10722/200624-
dc.languageengen_US
dc.publisherAmerican Vacuum Society. The Journal's web site is located at http://avspublications.org/jvstb/-
dc.relation.ispartofJournal of Vacuum Science and Technology: Part B Nanotechnology & Microelectronicsen_US
dc.rightsCopyright 2013 American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Vacuum Society. The following article appeared in Journal of Vacuum Science and Technology: Part B Nanotechnology & Microelectronics, 2013, v. 31 n. 4, p. 041605-1-041605-13 and may be found at http://scitation.aip.org/content/avs/journal/jvstb/31/4/10.1116/1.4813781-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleLevel-set-based inverse lithography for mask synthesis using the conjugate gradient and an optimal time stepen_US
dc.typeArticleen_US
dc.identifier.emailLv, W: wenlv@hku.hken_US
dc.identifier.emailShen, Y: shenyj@hku.hken_US
dc.identifier.emailLam, EYM: elam@eee.hku.hken_US
dc.identifier.authorityLam, EYM=rp00131en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1116/1.4813781-
dc.identifier.scopuseid_2-s2.0-84887426786-
dc.identifier.hkuros233679en_US
dc.identifier.volume31-
dc.identifier.issue4-
dc.identifier.spage041605-
dc.identifier.epage1-
dc.identifier.isiWOS:000322379800028-
dc.publisher.placeUnited States-

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