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Article: Robust source and mask optimization compensating for mask topography effects in computational lithography

TitleRobust source and mask optimization compensating for mask topography effects in computational lithography
Authors
Issue Date2014
PublisherOptical Society of America. The Journal's web site is located at http://www.opticsexpress.org
Citation
Optics Express, 2014, v. 22 n. 8, p. 9471-9485 How to Cite?
AbstractMask topography effects need to be taken into consideration for a more accurate solution of source mask optimization (SMO) in advanced optical lithography. However, rigorous 3D mask models generally involve intensive computation and conventional SMO fails to manipulate the mask-induced undesired phase errors that degrade the usable depth of focus (uDOF) and process yield. In this work, an optimization approach incorporating pupil wavefront aberrations into SMO procedure is developed as an alternative to maximize the uDOF. We first design the pupil wavefront function by adding primary and secondary spherical aberrations through the coefficients of the Zernike polynomials, and then apply the conjugate gradient method to achieve an optimal source-mask pair under the condition of aberrated pupil. We also use a statistical model to determine the Zernike coefficients for the phase control and adjustment. Rigorous simulations of thick masks show that this approach provides compensation for mask topography effects by improving the pattern fidelity and increasing uDOF.
Persistent Identifierhttp://hdl.handle.net/10722/200619
ISSN
2015 Impact Factor: 3.148
2015 SCImago Journal Rankings: 2.186

 

DC FieldValueLanguage
dc.contributor.authorLi, Jen_US
dc.contributor.authorLam, EYMen_US
dc.date.accessioned2014-08-21T06:52:41Z-
dc.date.available2014-08-21T06:52:41Z-
dc.date.issued2014en_US
dc.identifier.citationOptics Express, 2014, v. 22 n. 8, p. 9471-9485en_US
dc.identifier.issn1094-4087-
dc.identifier.urihttp://hdl.handle.net/10722/200619-
dc.description.abstractMask topography effects need to be taken into consideration for a more accurate solution of source mask optimization (SMO) in advanced optical lithography. However, rigorous 3D mask models generally involve intensive computation and conventional SMO fails to manipulate the mask-induced undesired phase errors that degrade the usable depth of focus (uDOF) and process yield. In this work, an optimization approach incorporating pupil wavefront aberrations into SMO procedure is developed as an alternative to maximize the uDOF. We first design the pupil wavefront function by adding primary and secondary spherical aberrations through the coefficients of the Zernike polynomials, and then apply the conjugate gradient method to achieve an optimal source-mask pair under the condition of aberrated pupil. We also use a statistical model to determine the Zernike coefficients for the phase control and adjustment. Rigorous simulations of thick masks show that this approach provides compensation for mask topography effects by improving the pattern fidelity and increasing uDOF.-
dc.languageengen_US
dc.publisherOptical Society of America. The Journal's web site is located at http://www.opticsexpress.org-
dc.relation.ispartofOptics Expressen_US
dc.rightsOptics Express. Copyright © Optical Society of America.-
dc.rightsThis paper was published in Optics Express and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: http://www.opticsinfobase.org/oe/abstract.cfm?uri=oe-22-8-9471. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleRobust source and mask optimization compensating for mask topography effects in computational lithographyen_US
dc.typeArticleen_US
dc.identifier.emailLam, EYM: elam@eee.hku.hken_US
dc.identifier.authorityLam, EYM=rp00131en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1364/OE.22.009471-
dc.identifier.pmid24787836-
dc.identifier.hkuros233666en_US
dc.identifier.volume22-
dc.identifier.issue8-
dc.identifier.spage9471-
dc.identifier.epage9485-
dc.publisher.placeUnited States-

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