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Conference Paper: Light programmable organic transistor memory device based on hybrid dielectric

TitleLight programmable organic transistor memory device based on hybrid dielectric
Authors
Issue Date2013
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml?WT.svl=mddp2
Citation
Conference 8831 - Organic Field-Effect Transistors XII; and Organic Semiconductors in Sensors and Bioelectronics VI, San Diego, California, USA, 26-29 August 2013. In Proceedings of SPIE, 2013, v. 8831, p. abstract no. 88311E How to Cite?
AbstractWe have fabricated the transistor memory devices based on SiO2 and polystyrene (PS) hybrid dielectric. The trap states densities with different semiconductors have been investigated and a maximum 160V memory window between programming and erasing is realized. For DNTT based transistor, the trapped electron density is limited by the number of mobile electrons in semiconductor. The charge transport mechanism is verified by light induced Vth shift effect. Furthermore, in order to meet the low operating power requirement of portable electronic devices, we fabricated the organic memory transistor based on AlOx/self-assembly monolayer (SAM)/PS hybrid dielectric, the effective capacitance of hybrid dielectric is 210 nF cm-2 and the transistor can reach saturation state at -3V gate bias. The memory window in transfer I-V curve is around 1V under +/-5V programming and erasing bias. © 2013 SPIE.
Persistent Identifierhttp://hdl.handle.net/10722/199413
ISSN
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorRen, Xen_US
dc.contributor.authorChan, KLen_US
dc.date.accessioned2014-07-22T01:16:45Z-
dc.date.available2014-07-22T01:16:45Z-
dc.date.issued2013en_US
dc.identifier.citationConference 8831 - Organic Field-Effect Transistors XII; and Organic Semiconductors in Sensors and Bioelectronics VI, San Diego, California, USA, 26-29 August 2013. In Proceedings of SPIE, 2013, v. 8831, p. abstract no. 88311Een_US
dc.identifier.issn0277-786X-
dc.identifier.urihttp://hdl.handle.net/10722/199413-
dc.description.abstractWe have fabricated the transistor memory devices based on SiO2 and polystyrene (PS) hybrid dielectric. The trap states densities with different semiconductors have been investigated and a maximum 160V memory window between programming and erasing is realized. For DNTT based transistor, the trapped electron density is limited by the number of mobile electrons in semiconductor. The charge transport mechanism is verified by light induced Vth shift effect. Furthermore, in order to meet the low operating power requirement of portable electronic devices, we fabricated the organic memory transistor based on AlOx/self-assembly monolayer (SAM)/PS hybrid dielectric, the effective capacitance of hybrid dielectric is 210 nF cm-2 and the transistor can reach saturation state at -3V gate bias. The memory window in transfer I-V curve is around 1V under +/-5V programming and erasing bias. © 2013 SPIE.-
dc.languageengen_US
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml?WT.svl=mddp2-
dc.relation.ispartofProceedings of SPIE - International Society for Optical Engineeringen_US
dc.rightsProceedings of SPIE - International Society for Optical Engineering. Copyright © S P I E - International Society for Optical Engineering.-
dc.rightsCopyright notice format: Copyright 2013 (year) Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleLight programmable organic transistor memory device based on hybrid dielectricen_US
dc.typeConference_Paperen_US
dc.identifier.emailChan, KL: pklc@hku.hken_US
dc.identifier.authorityChan, KL=rp01532en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1117/12.2022984-
dc.identifier.scopuseid_2-s2.0-84889077974-
dc.identifier.hkuros231432en_US
dc.identifier.volume8831en_US
dc.identifier.spageabstract no. 88311Een_US
dc.identifier.epageabstract no. 88311Een_US
dc.identifier.isiWOS:000327122500009-
dc.publisher.placeUnited States-

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