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Conference Paper: Light programmable organic transistor memory device based on hybrid dielectric
Title | Light programmable organic transistor memory device based on hybrid dielectric |
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Authors | |
Keywords | Hybrid dielectric Light programmable Organic transistor memory device |
Issue Date | 2013 |
Publisher | S P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml?WT.svl=mddp2 |
Citation | Conference 8831 - Organic Field-Effect Transistors XII; and Organic Semiconductors in Sensors and Bioelectronics VI, San Diego, California, USA, 26-29 August 2013. In Proceedings of SPIE, 2013, v. 8831, article no. 88311E How to Cite? |
Abstract | We have fabricated the transistor memory devices based on SiO2 and polystyrene (PS) hybrid dielectric. The trap states densities with different semiconductors have been investigated and a maximum 160V memory window between programming and erasing is realized. For DNTT based transistor, the trapped electron density is limited by the number of mobile electrons in semiconductor. The charge transport mechanism is verified by light induced Vth shift effect. Furthermore, in order to meet the low operating power requirement of portable electronic devices, we fabricated the organic memory transistor based on AlOx/self-assembly monolayer (SAM)/PS hybrid dielectric, the effective capacitance of hybrid dielectric is 210 nF cm-2 and the transistor can reach saturation state at -3V gate bias. The memory window in transfer I-V curve is around 1V under +/-5V programming and erasing bias. © 2013 SPIE. |
Persistent Identifier | http://hdl.handle.net/10722/199413 |
ISSN | 2023 SCImago Journal Rankings: 0.152 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Ren, X | en_US |
dc.contributor.author | Chan, KL | en_US |
dc.date.accessioned | 2014-07-22T01:16:45Z | - |
dc.date.available | 2014-07-22T01:16:45Z | - |
dc.date.issued | 2013 | en_US |
dc.identifier.citation | Conference 8831 - Organic Field-Effect Transistors XII; and Organic Semiconductors in Sensors and Bioelectronics VI, San Diego, California, USA, 26-29 August 2013. In Proceedings of SPIE, 2013, v. 8831, article no. 88311E | en_US |
dc.identifier.issn | 0277-786X | - |
dc.identifier.uri | http://hdl.handle.net/10722/199413 | - |
dc.description.abstract | We have fabricated the transistor memory devices based on SiO2 and polystyrene (PS) hybrid dielectric. The trap states densities with different semiconductors have been investigated and a maximum 160V memory window between programming and erasing is realized. For DNTT based transistor, the trapped electron density is limited by the number of mobile electrons in semiconductor. The charge transport mechanism is verified by light induced Vth shift effect. Furthermore, in order to meet the low operating power requirement of portable electronic devices, we fabricated the organic memory transistor based on AlOx/self-assembly monolayer (SAM)/PS hybrid dielectric, the effective capacitance of hybrid dielectric is 210 nF cm-2 and the transistor can reach saturation state at -3V gate bias. The memory window in transfer I-V curve is around 1V under +/-5V programming and erasing bias. © 2013 SPIE. | - |
dc.language | eng | en_US |
dc.publisher | S P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml?WT.svl=mddp2 | - |
dc.relation.ispartof | Proceedings of SPIE - International Society for Optical Engineering | en_US |
dc.rights | Copyright 2013 Society of Photo‑Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, and modification of the contents of the publication are prohibited. This article is available online at https://doi.org/10.1117/12.2022984 | - |
dc.subject | Hybrid dielectric | - |
dc.subject | Light programmable | - |
dc.subject | Organic transistor memory device | - |
dc.title | Light programmable organic transistor memory device based on hybrid dielectric | en_US |
dc.type | Conference_Paper | en_US |
dc.identifier.email | Chan, KL: pklc@hku.hk | en_US |
dc.identifier.authority | Chan, KL=rp01532 | en_US |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1117/12.2022984 | - |
dc.identifier.scopus | eid_2-s2.0-84889077974 | - |
dc.identifier.hkuros | 231432 | en_US |
dc.identifier.volume | 8831 | en_US |
dc.identifier.spage | article no. 88311E | en_US |
dc.identifier.epage | article no. 88311E | en_US |
dc.identifier.isi | WOS:000327122500009 | - |
dc.publisher.place | United States | - |
dc.identifier.issnl | 0277-786X | - |