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Conference Paper: Flexible transistor active matrix array with all screen-printed electrodes

TitleFlexible transistor active matrix array with all screen-printed electrodes
Authors
Issue Date2013
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml?WT.svl=mddp2
Citation
Conference 8831 - Organic Field-Effect Transistors XII; and Organic Semiconductors in Sensors and Bioelectronics VI, San Diego, California, USA,26-29 August 2013. In Proceedings of SPIE, 2013, v. 8831, p. abstract no. 883116 How to Cite?
AbstractFlexible transistor active matrix array is fabricated on PEN substrate using all screen-printed gate, source and drain electrodes. Parylene-C and DNTT act as gate dielectric layer and semiconductor, respectively. The transistor possesses high mobility (0.33 cm2V-1 s-1), large on/off ratio (< 106) and low leakage current (10 pA). Active matrix array consists of 10×10 transistors were demonstrated. Transistors exhibited average mobility of 0.29 cm2V-1s-1 and on/off ratio larger than 104 in array form. In the transistor array, we achieve 75μm channel length and a size of 2 mm × 2 mm for each element in the array which indicates the current screen-printing method has large potential in large-area circuits and display applications. © 2013 SPIE.
Persistent Identifierhttp://hdl.handle.net/10722/199412
ISSN
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorPeng, Ben_US
dc.contributor.authorLin, JWen_US
dc.contributor.authorChan, KLen_US
dc.date.accessioned2014-07-22T01:16:45Z-
dc.date.available2014-07-22T01:16:45Z-
dc.date.issued2013en_US
dc.identifier.citationConference 8831 - Organic Field-Effect Transistors XII; and Organic Semiconductors in Sensors and Bioelectronics VI, San Diego, California, USA,26-29 August 2013. In Proceedings of SPIE, 2013, v. 8831, p. abstract no. 883116en_US
dc.identifier.issn0277-786X-
dc.identifier.urihttp://hdl.handle.net/10722/199412-
dc.description.abstractFlexible transistor active matrix array is fabricated on PEN substrate using all screen-printed gate, source and drain electrodes. Parylene-C and DNTT act as gate dielectric layer and semiconductor, respectively. The transistor possesses high mobility (0.33 cm2V-1 s-1), large on/off ratio (< 106) and low leakage current (10 pA). Active matrix array consists of 10×10 transistors were demonstrated. Transistors exhibited average mobility of 0.29 cm2V-1s-1 and on/off ratio larger than 104 in array form. In the transistor array, we achieve 75μm channel length and a size of 2 mm × 2 mm for each element in the array which indicates the current screen-printing method has large potential in large-area circuits and display applications. © 2013 SPIE.-
dc.languageengen_US
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml?WT.svl=mddp2-
dc.relation.ispartofProceedings of SPIE - International Society for Optical Engineeringen_US
dc.rightsProceedings of SPIE - International Society for Optical Engineering. Copyright © S P I E - International Society for Optical Engineering.-
dc.rightsCopyright notice format: Copyright 2013 (year) Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleFlexible transistor active matrix array with all screen-printed electrodesen_US
dc.typeConference_Paperen_US
dc.identifier.emailChan, KL: pklc@hku.hken_US
dc.identifier.authorityChan, KL=rp01532en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1117/12.2022621-
dc.identifier.scopuseid_2-s2.0-84889072013-
dc.identifier.hkuros231431en_US
dc.identifier.volume8831en_US
dc.identifier.spageabstract no. 883116en_US
dc.identifier.epageabstract no. 883116en_US
dc.identifier.isiWOS:000327122500007-
dc.publisher.placeUnited States-

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