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Article: Enhanced Raman scattering from vertical silicon nanowires array

TitleEnhanced Raman scattering from vertical silicon nanowires array
Authors
Issue Date2011
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2011, v. 98 n. 18, article no. 183108, p. 183108-1-183108-3 How to Cite?
AbstractWe fabricated ordered hexagonal-packed vertical silicon nanowire (SiNW) arrays with varying diameters of 450-900 nm and varying lengths of 0.54-7.3 μm, and studied their Raman enhancement properties. We found the Raman enhancement per unit volume (REV) increased with decreasing wire diameters and oscillated with wire length, and the REV of seven 450-nm-diameter, 3-μm -long SiNWs was about twice that of a single SiNW having the same size. The differences were attributed to the vertical finite-length cylinder structures of the SiNW array, as supported by finite-difference-time-domain simulation results based on the helical resonant surface wave model. © 2011 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/199198
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorHuang, JAen_US
dc.date.accessioned2014-07-22T01:07:43Z-
dc.date.available2014-07-22T01:07:43Z-
dc.date.issued2011en_US
dc.identifier.citationApplied Physics Letters, 2011, v. 98 n. 18, article no. 183108, p. 183108-1-183108-3en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/199198-
dc.description.abstractWe fabricated ordered hexagonal-packed vertical silicon nanowire (SiNW) arrays with varying diameters of 450-900 nm and varying lengths of 0.54-7.3 μm, and studied their Raman enhancement properties. We found the Raman enhancement per unit volume (REV) increased with decreasing wire diameters and oscillated with wire length, and the REV of seven 450-nm-diameter, 3-μm -long SiNWs was about twice that of a single SiNW having the same size. The differences were attributed to the vertical finite-length cylinder structures of the SiNW array, as supported by finite-difference-time-domain simulation results based on the helical resonant surface wave model. © 2011 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_US
dc.rightsCopyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2011, v. 98 n. 18, article no. 183108 and may be found at http://scitation.aip.org.eproxy2.lib.hku.hk/content/aip/journal/apl/98/18/10.1063/1.3584871en_US
dc.rightsCreative Commons: Attribution 3.0 Hong Kong Licenseen_US
dc.titleEnhanced Raman scattering from vertical silicon nanowires arrayen_US
dc.typeArticleen_US
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1063/1.3584871en_US
dc.identifier.scopuseid_2-s2.0-79957457579-
dc.identifier.hkuros230416en_US
dc.identifier.volume98en_US
dc.identifier.issue18en_US
dc.identifier.spage183108-1en_US
dc.identifier.epage183108-3en_US
dc.identifier.isiWOS:000290392300052-
dc.publisher.placeUnited Statesen_US

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