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Article: Low-threshold lasing action in an asymmetric double ZnO/ZnMgO quantum well structure

TitleLow-threshold lasing action in an asymmetric double ZnO/ZnMgO quantum well structure
Authors
Issue Date2013
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2013, v. 103 n. 13, p. article no. 131104 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/193606
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorSu, Sen_US
dc.contributor.authorZhu, Hen_US
dc.contributor.authorZhang, LXen_US
dc.contributor.authorHe, Men_US
dc.contributor.authorZhao, LZen_US
dc.contributor.authorYu, SFen_US
dc.contributor.authorWang, JNen_US
dc.contributor.authorLing, CC-
dc.date.accessioned2014-01-20T05:08:01Z-
dc.date.available2014-01-20T05:08:01Z-
dc.date.issued2013en_US
dc.identifier.citationApplied Physics Letters, 2013, v. 103 n. 13, p. article no. 131104en_US
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/193606-
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleLow-threshold lasing action in an asymmetric double ZnO/ZnMgO quantum well structureen_US
dc.typeArticleen_US
dc.identifier.emailSu, S: scsu@hku.hken_US
dc.identifier.emailLing, CC: ccling@hkucc.hku.hk-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4822265en_US
dc.identifier.scopuseid_2-s2.0-84885004627-
dc.identifier.hkuros227348en_US
dc.identifier.volume103en_US
dc.identifier.issue13-
dc.identifier.spagearticle no. 131104en_US
dc.identifier.epagearticle no. 131104en_US
dc.identifier.isiWOS:000325284500004-
dc.publisher.placeUnited States-

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