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Article: Study on a metal-insulator-silicon hydrogen sensor with LaTiON as gate insulator

TitleStudy on a metal-insulator-silicon hydrogen sensor with LaTiON as gate insulator
Authors
KeywordsHigh-k dielectric
Hydrogen
Schottky diode
Sensor
Issue Date2013
AbstractIn this paper, by using a metal-insulator- semiconductor Schottky-diode structure, we examined the electrical and hydrogen-sensing properties of radio frequency sputtered LaTiON thin films that had been annealed at four different temperatures (450 °C, 550 °C, 650 °C, and 750 °C). Characterization of their morphological surface indicates that their average surface roughness decreases from 0.108 to 0.090 nm with increasing annealing temperature. X-ray diffraction shows the growths of La and Ti are in the 1 0 0 direction, i.e., in parallel to the Si substrate. Analysis of measured electrical characteristics indicates that thermionic emission is the dominant mechanism at low temperatures (from RT to 150 °C), while Poole-Frenkel emission plays an important role at high temperatures (above 150 °C) in the electrical conduction. Results suggest that the sample annealed at 650 °C has the most promising hydrogen-sensing performance (better current-voltage characteristics, higher sensitivity of 2.0 at 100 °C) among the four samples. © 2001-2012 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/192462
ISSN
2015 Impact Factor: 1.889
2015 SCImago Journal Rankings: 0.759
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorYu, J-
dc.contributor.authorChen, G-
dc.contributor.authorLai, PT-
dc.date.accessioned2013-11-06T07:58:37Z-
dc.date.available2013-11-06T07:58:37Z-
dc.date.issued2013-
dc.identifier.issn1530-437X-
dc.identifier.urihttp://hdl.handle.net/10722/192462-
dc.description.abstractIn this paper, by using a metal-insulator- semiconductor Schottky-diode structure, we examined the electrical and hydrogen-sensing properties of radio frequency sputtered LaTiON thin films that had been annealed at four different temperatures (450 °C, 550 °C, 650 °C, and 750 °C). Characterization of their morphological surface indicates that their average surface roughness decreases from 0.108 to 0.090 nm with increasing annealing temperature. X-ray diffraction shows the growths of La and Ti are in the 1 0 0 direction, i.e., in parallel to the Si substrate. Analysis of measured electrical characteristics indicates that thermionic emission is the dominant mechanism at low temperatures (from RT to 150 °C), while Poole-Frenkel emission plays an important role at high temperatures (above 150 °C) in the electrical conduction. Results suggest that the sample annealed at 650 °C has the most promising hydrogen-sensing performance (better current-voltage characteristics, higher sensitivity of 2.0 at 100 °C) among the four samples. © 2001-2012 IEEE.-
dc.languageeng-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectHigh-k dielectric-
dc.subjectHydrogen-
dc.subjectSchottky diode-
dc.subjectSensor-
dc.titleStudy on a metal-insulator-silicon hydrogen sensor with LaTiON as gate insulatoren_US
dc.typeArticle-
dc.identifier.emailYu, J: jcwyu@hku.hk-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/JSEN.2012.2235065-
dc.identifier.scopuseid_2-s2.0-84875701157-
dc.identifier.hkuros216212-
dc.identifier.volume13-
dc.identifier.issue5-
dc.identifier.spage1534-
dc.identifier.epage1540-
dc.identifier.isiWOS:000317003900022-
dc.publisher.placeUnited States-

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