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Article: Study on a metal-insulator-silicon hydrogen sensor with LaTiON as gate insulator
Title | Study on a metal-insulator-silicon hydrogen sensor with LaTiON as gate insulator |
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Authors | |
Keywords | High-k dielectric Hydrogen Schottky diode Sensor |
Issue Date | 2013 |
Citation | IEEE Sensors Journal, 2013, v. 13 n. 5, p. 1534 - 1540 How to Cite? |
Abstract | In this paper, by using a metal-insulator- semiconductor Schottky-diode structure, we examined the electrical and hydrogen-sensing properties of radio frequency sputtered LaTiON thin films that had been annealed at four different temperatures (450 °C, 550 °C, 650 °C, and 750 °C). Characterization of their morphological surface indicates that their average surface roughness decreases from 0.108 to 0.090 nm with increasing annealing temperature. X-ray diffraction shows the growths of La and Ti are in the 1 0 0 direction, i.e., in parallel to the Si substrate. Analysis of measured electrical characteristics indicates that thermionic emission is the dominant mechanism at low temperatures (from RT to 150 °C), while Poole-Frenkel emission plays an important role at high temperatures (above 150 °C) in the electrical conduction. Results suggest that the sample annealed at 650 °C has the most promising hydrogen-sensing performance (better current-voltage characteristics, higher sensitivity of 2.0 at 100 °C) among the four samples. © 2001-2012 IEEE. |
Persistent Identifier | http://hdl.handle.net/10722/192462 |
ISSN | 2023 Impact Factor: 4.3 2023 SCImago Journal Rankings: 1.084 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Yu, J | - |
dc.contributor.author | Chen, G | - |
dc.contributor.author | Lai, PT | - |
dc.date.accessioned | 2013-11-06T07:58:37Z | - |
dc.date.available | 2013-11-06T07:58:37Z | - |
dc.date.issued | 2013 | - |
dc.identifier.citation | IEEE Sensors Journal, 2013, v. 13 n. 5, p. 1534 - 1540 | - |
dc.identifier.issn | 1530-437X | - |
dc.identifier.uri | http://hdl.handle.net/10722/192462 | - |
dc.description.abstract | In this paper, by using a metal-insulator- semiconductor Schottky-diode structure, we examined the electrical and hydrogen-sensing properties of radio frequency sputtered LaTiON thin films that had been annealed at four different temperatures (450 °C, 550 °C, 650 °C, and 750 °C). Characterization of their morphological surface indicates that their average surface roughness decreases from 0.108 to 0.090 nm with increasing annealing temperature. X-ray diffraction shows the growths of La and Ti are in the 1 0 0 direction, i.e., in parallel to the Si substrate. Analysis of measured electrical characteristics indicates that thermionic emission is the dominant mechanism at low temperatures (from RT to 150 °C), while Poole-Frenkel emission plays an important role at high temperatures (above 150 °C) in the electrical conduction. Results suggest that the sample annealed at 650 °C has the most promising hydrogen-sensing performance (better current-voltage characteristics, higher sensitivity of 2.0 at 100 °C) among the four samples. © 2001-2012 IEEE. | - |
dc.language | eng | - |
dc.relation.ispartof | IEEE Sensors Journal | - |
dc.subject | High-k dielectric | - |
dc.subject | Hydrogen | - |
dc.subject | Schottky diode | - |
dc.subject | Sensor | - |
dc.title | Study on a metal-insulator-silicon hydrogen sensor with LaTiON as gate insulator | en_US |
dc.type | Article | - |
dc.identifier.email | Yu, J: jcwyu@hku.hk | - |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/JSEN.2012.2235065 | - |
dc.identifier.scopus | eid_2-s2.0-84875701157 | - |
dc.identifier.hkuros | 216212 | - |
dc.identifier.volume | 13 | - |
dc.identifier.issue | 5 | - |
dc.identifier.spage | 1534 | - |
dc.identifier.epage | 1540 | - |
dc.identifier.isi | WOS:000317003900022 | - |
dc.publisher.place | United States | - |
dc.identifier.issnl | 1530-437X | - |