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Conference Paper: Influence of Ar/O2 ratio during IGZO deposition on the electrical characteristics of a-IGZO TFT with HfLaO gate dilectric

TitleInfluence of Ar/O2 ratio during IGZO deposition on the electrical characteristics of a-IGZO TFT with HfLaO gate dilectric
Authors
Issue Date2013
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853
Citation
The 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, 3-5 June 2013. In Conference Proceedings, 2013, p. 1-2 How to Cite?
AbstractIn this work, the influence of Ar/O2 ratio during InGaZnO (IGZO) deposition on the electrical characteristics of a-IGZO thin-film transistor (TFT) with HtLaO gate dielectric has been investigated. It is found that lowering the oxygen concentration in the a-IGZO sputtering ambient can effectively improve the device performance, including carrier mobility (µ sat), threshold voltage (V th), sub-threshold slope (SS) and on-off current ratio (I on/I off) Moreover, the hyster…
Persistent Identifierhttp://hdl.handle.net/10722/191662
ISBN

 

DC FieldValueLanguage
dc.contributor.authorQian, Len_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2013-10-15T07:14:58Z-
dc.date.available2013-10-15T07:14:58Z-
dc.date.issued2013en_US
dc.identifier.citationThe 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, 3-5 June 2013. In Conference Proceedings, 2013, p. 1-2en_US
dc.identifier.isbn978-1-4673-2523-3-
dc.identifier.urihttp://hdl.handle.net/10722/191662-
dc.description.abstractIn this work, the influence of Ar/O2 ratio during InGaZnO (IGZO) deposition on the electrical characteristics of a-IGZO thin-film transistor (TFT) with HtLaO gate dielectric has been investigated. It is found that lowering the oxygen concentration in the a-IGZO sputtering ambient can effectively improve the device performance, including carrier mobility (µ sat), threshold voltage (V th), sub-threshold slope (SS) and on-off current ratio (I on/I off) Moreover, the hyster…-
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853-
dc.relation.ispartofIEEE Conference on Electron Devices and Solid-State Circuits Proceedingsen_US
dc.rightsIEEE Conference on Electron Devices and Solid-State Circuits Proceedings. Copyright © IEEE.-
dc.rights©2013 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleInfluence of Ar/O2 ratio during IGZO deposition on the electrical characteristics of a-IGZO TFT with HfLaO gate dilectricen_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturepublished_or_final_version-
dc.identifier.hkuros226067en_US
dc.identifier.spage1-
dc.identifier.epage2-
dc.publisher.placeUnited Statesen_US
dc.customcontrol.immutablesml 131108-

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