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Conference Paper: A novel hydrogen sensor based on Pt/WO3/Si MIS Schottky diode

TitleA novel hydrogen sensor based on Pt/WO3/Si MIS Schottky diode
Authors
Issue Date2013
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853
Citation
The 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, 3-5 June 2013. In Conference Proceedings, 2013, p. 1-2 How to Cite?
AbstractIn this work, we investigate the static and dynamic gas response of Schottky diode based hydrogen sensor employing a PtlW03ln-type Si configuration. The role and importance of tungsten trioxide as an insulating layer within the device is discussed with respect to the measured electronic properties. The W03 thin films were deposited using RF reactive magnetron sputtering. The surface morphology was studied by an atomic force microscopy (AFM) and the scan results indicated a smooth film with a roughness of 0.18 A. From the X-ray photoelectron spectroscopy (XPS) characterization, it can be confirmed that the films were stoichiometric W03 with a thickness of about 4 nm (as measured by an ellipsometer). The 1-V characteristics and dynamic response with respect to H2 gas were measured at elevated temperatures from 50°C to 150 °C and the results indicate that the H2 sensitivity of this device can exceed approximately 1000 % with an average response time of less than 10 seconds. We discuss and explain these observations in terms of current transportation mechanisms using the thermionic emission model and the change in the Schottky barrier height.
Persistent Identifierhttp://hdl.handle.net/10722/191661
ISBN

 

DC FieldValueLanguage
dc.contributor.authorLiu, Yen_US
dc.contributor.authorYu, Jen_US
dc.contributor.authorCai, FXen_US
dc.contributor.authorTang, WMen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2013-10-15T07:14:57Z-
dc.date.available2013-10-15T07:14:57Z-
dc.date.issued2013en_US
dc.identifier.citationThe 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, 3-5 June 2013. In Conference Proceedings, 2013, p. 1-2en_US
dc.identifier.isbn978-1-4673-2523-3-
dc.identifier.urihttp://hdl.handle.net/10722/191661-
dc.description.abstractIn this work, we investigate the static and dynamic gas response of Schottky diode based hydrogen sensor employing a PtlW03ln-type Si configuration. The role and importance of tungsten trioxide as an insulating layer within the device is discussed with respect to the measured electronic properties. The W03 thin films were deposited using RF reactive magnetron sputtering. The surface morphology was studied by an atomic force microscopy (AFM) and the scan results indicated a smooth film with a roughness of 0.18 A. From the X-ray photoelectron spectroscopy (XPS) characterization, it can be confirmed that the films were stoichiometric W03 with a thickness of about 4 nm (as measured by an ellipsometer). The 1-V characteristics and dynamic response with respect to H2 gas were measured at elevated temperatures from 50°C to 150 °C and the results indicate that the H2 sensitivity of this device can exceed approximately 1000 % with an average response time of less than 10 seconds. We discuss and explain these observations in terms of current transportation mechanisms using the thermionic emission model and the change in the Schottky barrier height.-
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853-
dc.relation.ispartofIEEE Conference on Electron Devices and Solid-State Circuits Proceedingsen_US
dc.rightsIEEE Conference on Electron Devices and Solid-State Circuits Proceedings. Copyright © IEEE.-
dc.rights©2013 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleA novel hydrogen sensor based on Pt/WO3/Si MIS Schottky diodeen_US
dc.typeConference_Paperen_US
dc.identifier.emailYu, J: jcwyu@hku.hken_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturepublished_or_final_version-
dc.identifier.hkuros226061en_US
dc.identifier.spage1-
dc.identifier.epage2-
dc.publisher.placeUnited Statesen_US
dc.customcontrol.immutablesml 131108-

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