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Conference Paper: Nitrided GdTiO as charge-trapping layer for flash memory applications

TitleNitrided GdTiO as charge-trapping layer for flash memory applications
Authors
KeywordsCharge trap
Memory applications
Memory window
Nitrided
Nitrogen incorporation
Program/erase speed
Retention characteristics
Issue Date2012
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000707
Citation
The 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2012), Xi'an, China, 29 October-1 November 2012. In Conference Proceedings, 2012, p. 1-3 How to Cite?
AbstractBased on capacitor with the structure of Al/Al2O 3/GdTiO (N)/SiO2/Si, the charge-trapping properties of GdTiO and GdTiON films were investigated. Compared to the memory device with GdTiO film as charge-trapping layer, the one with GdTiON showed higher program/erase speed, larger memory window, and better retention characteristic due to additional charge traps with desirable energy level created by nitrogen incorporation in the film. © 2012 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/191644
ISBN

 

DC FieldValueLanguage
dc.contributor.authorTao, Qen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2013-10-15T07:14:50Z-
dc.date.available2013-10-15T07:14:50Z-
dc.date.issued2012en_US
dc.identifier.citationThe 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2012), Xi'an, China, 29 October-1 November 2012. In Conference Proceedings, 2012, p. 1-3en_US
dc.identifier.isbn978-1-4673-2475-5-
dc.identifier.urihttp://hdl.handle.net/10722/191644-
dc.description.abstractBased on capacitor with the structure of Al/Al2O 3/GdTiO (N)/SiO2/Si, the charge-trapping properties of GdTiO and GdTiON films were investigated. Compared to the memory device with GdTiO film as charge-trapping layer, the one with GdTiON showed higher program/erase speed, larger memory window, and better retention characteristic due to additional charge traps with desirable energy level created by nitrogen incorporation in the film. © 2012 IEEE.-
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000707-
dc.relation.ispartofInternational Conference on Solid-State and Integrated Circuit Technology Proceedingsen_US
dc.rightsInternational Conference on Solid-State and Integrated Circuit Technology Proceedings. Copyright © IEEE.-
dc.rights©2012 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectCharge trap-
dc.subjectMemory applications-
dc.subjectMemory window-
dc.subjectNitrided-
dc.subjectNitrogen incorporation-
dc.subjectProgram/erase speed-
dc.subjectRetention characteristics-
dc.titleNitrided GdTiO as charge-trapping layer for flash memory applicationsen_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/ICSICT.2012.6466677-
dc.identifier.scopuseid_2-s2.0-84874921692-
dc.identifier.hkuros226026en_US
dc.identifier.spage1-
dc.identifier.epage3-
dc.publisher.placeUnited Statesen_US
dc.customcontrol.immutablesml 131107-

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