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Conference Paper: Nitrided GdTiO as charge-trapping layer for flash memory applications

TitleNitrided GdTiO as charge-trapping layer for flash memory applications
Authors
Tao, QLai, PT
KeywordsCharge trap
Memory applications
Memory window
Nitrided
Nitrogen incorporation
Program/erase speed
Retention characteristics
Issue Date2012
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000707
Citation
The 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2012), Xi'an, China, 29 October-1 November 2012. In Conference Proceedings, 2012, p. 1-3 How to Cite?
DOI: http://dx.doi.org/10.1109/ICSICT.2012.6466677
AbstractBased on capacitor with the structure of Al/Al2O 3/GdTiO (N)/SiO2/Si, the charge-trapping properties of GdTiO and GdTiON films were investigated. Compared to the memory device with GdTiO film as charge-trapping layer, the one with GdTiON showed higher program/erase speed, larger memory window, and better retention characteristic due to additional charge traps with desirable energy level created by nitrogen incorporation in the film. © 2012 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/191644
ISBN
978-1-4673-2475-5

 

DC FieldValueLanguage
dc.contributor.authorTao, Qen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2013-10-15T07:14:50Z-
dc.date.available2013-10-15T07:14:50Z-
dc.date.issued2012en_US
dc.identifier.citationThe 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2012), Xi'an, China, 29 October-1 November 2012. In Conference Proceedings, 2012, p. 1-3en_US
dc.identifier.isbn978-1-4673-2475-5-
dc.identifier.urihttp://hdl.handle.net/10722/191644-
dc.description.abstractBased on capacitor with the structure of Al/Al2O 3/GdTiO (N)/SiO2/Si, the charge-trapping properties of GdTiO and GdTiON films were investigated. Compared to the memory device with GdTiO film as charge-trapping layer, the one with GdTiON showed higher program/erase speed, larger memory window, and better retention characteristic due to additional charge traps with desirable energy level created by nitrogen incorporation in the film. © 2012 IEEE.-
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000707-
dc.relation.ispartofInternational Conference on Solid-State and Integrated Circuit Technology Proceedingsen_US
dc.subjectCharge trap-
dc.subjectMemory applications-
dc.subjectMemory window-
dc.subjectNitrided-
dc.subjectNitrogen incorporation-
dc.subjectProgram/erase speed-
dc.subjectRetention characteristics-
dc.titleNitrided GdTiO as charge-trapping layer for flash memory applicationsen_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/ICSICT.2012.6466677-
dc.identifier.scopuseid_2-s2.0-84874921692-
dc.identifier.hkuros226026en_US
dc.identifier.spage1-
dc.identifier.epage3-
dc.publisher.placeUnited Statesen_US
dc.customcontrol.immutablesml 131107-

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