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Article: Fluorination of Al2O3 blocking layer for improving the performance of metal-oxide-nitride-oxide-silicon flash memory

TitleFluorination of Al2O3 blocking layer for improving the performance of metal-oxide-nitride-oxide-silicon flash memory
Authors
Issue Date2013
PublisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jhome/112716025
Citation
Physica Status Solidi Rapid Research Letters, 2013, v. 7 n. 6, p. 434-437 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/191391
ISSN
2015 Impact Factor: 2.578
2015 SCImago Journal Rankings: 1.243
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorTao, Qen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2013-10-15T06:55:36Z-
dc.date.available2013-10-15T06:55:36Z-
dc.date.issued2013en_US
dc.identifier.citationPhysica Status Solidi Rapid Research Letters, 2013, v. 7 n. 6, p. 434-437en_US
dc.identifier.issn1862-6254-
dc.identifier.urihttp://hdl.handle.net/10722/191391-
dc.languageengen_US
dc.publisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jhome/112716025-
dc.relation.ispartofPhysica Status Solidi Rapid Research Lettersen_US
dc.titleFluorination of Al2O3 blocking layer for improving the performance of metal-oxide-nitride-oxide-silicon flash memoryen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.identifier.doi10.1002/pssr.201307122-
dc.identifier.scopuseid_2-s2.0-84879015816-
dc.identifier.hkuros226012en_US
dc.identifier.volume7en_US
dc.identifier.issue6-
dc.identifier.spage434en_US
dc.identifier.epage437en_US
dc.identifier.isiWOS:000320174900015-
dc.publisher.placeGermany-

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