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- Publisher Website: 10.1016/j.sse.2012.09.005
- Scopus: eid_2-s2.0-84869488616
- WOS: WOS:000313611000054
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Article: BaTiO3 as Charge-Trapping Layer for Nonvolatile Memory Applications
Title | BaTiO3 as Charge-Trapping Layer for Nonvolatile Memory Applications |
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Authors | |
Keywords | BaTiO 3 Charge-trapping layer High-k dielectric Nonvolatile memory |
Issue Date | 2013 |
Citation | Solid State Electronics, 2013, v. 79, p. 285-289 How to Cite? |
Persistent Identifier | http://hdl.handle.net/10722/191386 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | HUANG, X | en_US |
dc.contributor.author | Sin, JKO | en_US |
dc.contributor.author | Lai, PT | en_US |
dc.date.accessioned | 2013-10-15T06:55:35Z | - |
dc.date.available | 2013-10-15T06:55:35Z | - |
dc.date.issued | 2013 | en_US |
dc.identifier.citation | Solid State Electronics, 2013, v. 79, p. 285-289 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/191386 | - |
dc.language | eng | en_US |
dc.relation.ispartof | Solid State Electronics | en_US |
dc.subject | BaTiO 3 | - |
dc.subject | Charge-trapping layer | - |
dc.subject | High-k dielectric | - |
dc.subject | Nonvolatile memory | - |
dc.title | BaTiO3 as Charge-Trapping Layer for Nonvolatile Memory Applications | en_US |
dc.type | Article | en_US |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | en_US |
dc.identifier.authority | Lai, PT=rp00130 | en_US |
dc.identifier.doi | 10.1016/j.sse.2012.09.005 | - |
dc.identifier.scopus | eid_2-s2.0-84869488616 | - |
dc.identifier.hkuros | 225978 | en_US |
dc.identifier.volume | 79 | en_US |
dc.identifier.spage | 285 | en_US |
dc.identifier.epage | 289 | en_US |
dc.identifier.isi | WOS:000313611000054 | - |