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- Publisher Website: 10.1016/j.microrel.2012.06.112
- Scopus: eid_2-s2.0-84867582017
- WOS: WOS:000310767400016
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Article: Improved Performance of GeON as Charge Storage Layer in Flash Memory by Optimal Annealing
Title | Improved Performance of GeON as Charge Storage Layer in Flash Memory by Optimal Annealing |
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Authors | |
Issue Date | 2012 |
Publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel |
Citation | Microelectronics Reliability, 2012, v. 52 n. 11, p. 2597-2601 How to Cite? |
Persistent Identifier | http://hdl.handle.net/10722/191382 |
ISSN | 2023 Impact Factor: 1.6 2023 SCImago Journal Rankings: 0.394 |
ISI Accession Number ID |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | TAO, Q | en_US |
dc.contributor.author | Lai, PT | en_US |
dc.date.accessioned | 2013-10-15T06:55:34Z | - |
dc.date.available | 2013-10-15T06:55:34Z | - |
dc.date.issued | 2012 | en_US |
dc.identifier.citation | Microelectronics Reliability, 2012, v. 52 n. 11, p. 2597-2601 | en_US |
dc.identifier.issn | 0026-2714 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/191382 | - |
dc.language | eng | en_US |
dc.publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel | en_US |
dc.relation.ispartof | Microelectronics Reliability | en_US |
dc.title | Improved Performance of GeON as Charge Storage Layer in Flash Memory by Optimal Annealing | en_US |
dc.type | Article | en_US |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | en_US |
dc.identifier.authority | Lai, PT=rp00130 | en_US |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1016/j.microrel.2012.06.112 | - |
dc.identifier.scopus | eid_2-s2.0-84867582017 | - |
dc.identifier.hkuros | 225956 | en_US |
dc.identifier.volume | 52 | en_US |
dc.identifier.spage | 2597 | en_US |
dc.identifier.epage | 2601 | en_US |
dc.identifier.isi | WOS:000310767400016 | - |
dc.publisher.place | United Kingdom | en_US |
dc.identifier.issnl | 0026-2714 | - |