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Article: Improved Performance of GeON as Charge Storage Layer in Flash Memory by Optimal Annealing
|Title||Improved Performance of GeON as Charge Storage Layer in Flash Memory by Optimal Annealing|
|Publisher||Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel|
Microelectronics Reliability, 2012, v. 52, p. 2597-2601 How to Cite?
2015 Impact Factor: 1.202
2015 SCImago Journal Rankings: 0.675
|dc.identifier.citation||Microelectronics Reliability, 2012, v. 52, p. 2597-2601||en_US|
|dc.publisher||Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel||en_US|
|dc.rights||NOTICE: this is the author’s version of a work that was accepted for publication in <Journal title>. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in PUBLICATION, [VOL#, ISSUE#, (DATE)] DOI#||en_US|
|dc.title||Improved Performance of GeON as Charge Storage Layer in Flash Memory by Optimal Annealing||en_US|
|dc.identifier.email||Lai, PT: firstname.lastname@example.org||en_US|