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- Publisher Website: 10.1149/1.3700900
- Scopus: eid_2-s2.0-84869015063
- WOS: WOS:000325405800035
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Article: HfTiON as Charge-Trapping Layer for Nonvolatile Memory Applications
Title | HfTiON as Charge-Trapping Layer for Nonvolatile Memory Applications |
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Authors | |
Issue Date | 2012 |
Citation | ECS Transactions, 2012, v. 45 n. 3, p. 355-360 How to Cite? |
Persistent Identifier | http://hdl.handle.net/10722/191377 |
ISI Accession Number ID |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | HUANG, X | en_US |
dc.contributor.author | Lai, PT | en_US |
dc.date.accessioned | 2013-10-15T06:55:32Z | - |
dc.date.available | 2013-10-15T06:55:32Z | - |
dc.date.issued | 2012 | en_US |
dc.identifier.citation | ECS Transactions, 2012, v. 45 n. 3, p. 355-360 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/191377 | - |
dc.language | eng | en_US |
dc.relation.ispartof | ECS Transactions | en_US |
dc.title | HfTiON as Charge-Trapping Layer for Nonvolatile Memory Applications | en_US |
dc.type | Article | en_US |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | en_US |
dc.identifier.authority | Lai, PT=rp00130 | en_US |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1149/1.3700900 | - |
dc.identifier.scopus | eid_2-s2.0-84869015063 | - |
dc.identifier.hkuros | 225749 | en_US |
dc.identifier.volume | 45 | en_US |
dc.identifier.spage | 355 | en_US |
dc.identifier.epage | 360 | en_US |
dc.identifier.isi | WOS:000325405800035 | - |