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Article: HfTiON as Charge-Trapping Layer for Nonvolatile Memory Applications

TitleHfTiON as Charge-Trapping Layer for Nonvolatile Memory Applications
Authors
Issue Date2012
Citation
ECS Trans., 2012, v. 45, p. 355-360 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/191377

 

DC FieldValueLanguage
dc.contributor.authorHUANG, Xen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2013-10-15T06:55:32Z-
dc.date.available2013-10-15T06:55:32Z-
dc.date.issued2012en_US
dc.identifier.citationECS Trans., 2012, v. 45, p. 355-360en_US
dc.identifier.urihttp://hdl.handle.net/10722/191377-
dc.languageengen_US
dc.relation.ispartofECS Trans.en_US
dc.titleHfTiON as Charge-Trapping Layer for Nonvolatile Memory Applicationsen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.identifier.hkuros225749en_US
dc.identifier.volume45en_US
dc.identifier.spage355en_US
dc.identifier.epage360en_US

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