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Article: III-nitride Light-emitting Diode with Embedded Photonic Crystals

TitleIII-nitride Light-emitting Diode with Embedded Photonic Crystals
Authors
Issue Date2013
Citation
Applied Physics Letters, 2013, v. 102, p. 181117 How to Cite?
AbstractA photonic crystal has been embedded within an InGaN/GaN light-emitting diode structure via epitaxial lateral overgrowth of a p-type GaN capping layer. The photonic crystal is a hexagonal-closed-packed array of nano-pillars patterned by nanosphere lithography; the capping layer planarizes the disconnected pillars to form a current-injection device. Optical properties of the nanostructures and devices are extensively studied through a range of spectroscopy techniques and simulations. Most significantly, the emission wavelengths of embedded photonic crystal light-emitting diodes are nearly invariant of injection currents, attributed to partial suppression of the built-in piezoelectric in the quantum wells. © 2013 AIP Publishing LLC.
Persistent Identifierhttp://hdl.handle.net/10722/189022
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLI, KHen_US
dc.contributor.authorZANG, KYen_US
dc.contributor.authorCHUA, SJen_US
dc.contributor.authorChoi, HWen_US
dc.date.accessioned2013-09-17T14:24:35Z-
dc.date.available2013-09-17T14:24:35Z-
dc.date.issued2013en_US
dc.identifier.citationApplied Physics Letters, 2013, v. 102, p. 181117en_US
dc.identifier.issn0003-6951-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/189022-
dc.description.abstractA photonic crystal has been embedded within an InGaN/GaN light-emitting diode structure via epitaxial lateral overgrowth of a p-type GaN capping layer. The photonic crystal is a hexagonal-closed-packed array of nano-pillars patterned by nanosphere lithography; the capping layer planarizes the disconnected pillars to form a current-injection device. Optical properties of the nanostructures and devices are extensively studied through a range of spectroscopy techniques and simulations. Most significantly, the emission wavelengths of embedded photonic crystal light-emitting diodes are nearly invariant of injection currents, attributed to partial suppression of the built-in piezoelectric in the quantum wells. © 2013 AIP Publishing LLC.-
dc.languageengen_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleIII-nitride Light-emitting Diode with Embedded Photonic Crystalsen_US
dc.typeArticleen_US
dc.identifier.emailChoi, HW: hwchoi@eee.hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4804678-
dc.identifier.scopuseid_2-s2.0-84877739957-
dc.identifier.hkuros221366en_US
dc.identifier.volume102en_US
dc.identifier.spage181117en_US
dc.identifier.epage181117en_US
dc.identifier.isiWOS:000320439900017-

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