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Article: Semiconducting nanostructured copper sulfide thin films from bidentate copper(ii) complexes of N-(dialkylcarbamothioyl)-nitrosubstituted benzamides by chemical vapour deposition

TitleSemiconducting nanostructured copper sulfide thin films from bidentate copper(ii) complexes of N-(dialkylcarbamothioyl)-nitrosubstituted benzamides by chemical vapour deposition
Authors
Issue Date2013
Citation
New Journal of Chemistry, 2013, v. 37 n. 10, 3214-3221 How to Cite?
AbstractCopper(II) complexes of various N-(dialkylcarbamothioyl)-nitrosubstituted benzamide [dialkyl = di-n-butyl (1a, 2a); hexyl, methyl (3a); butyl, ethyl (4a)] have been synthesized and characterized by elemental analysis, IR spectroscopy and atmospheric pressure chemical ionization-mass spectrometry (MS-APCI). The molecular structure of the complex 2a was determined by single-crystal X-ray diffraction. These complexes were used as single-source precursors for the deposition of copper sulfide thin films by aerosol assisted chemical vapour deposition (AA-CVD) at 350 °C. The powder X-ray diffraction (p-XRD) patterns of the thin films of complexes 3a and 4ashowed the deposition of rhombohedral digenite Cu9S5 phase, and complex 1a deposited monoclinic roxbyite Cu7S4 phase at 350 °C with spherical crystallites. Complex 2a deposited orthorhombic anilite Cu7S4 phase with spherical crystallites. The degree of roughness of the film surface was determined by atomic force microscopy (AFM). The scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDXA) results showed the uniform distribution of copper sulfide in the films, which makes them useful semiconducting materials on a structured surface.
Persistent Identifierhttp://hdl.handle.net/10722/188887
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorSaeed, Sen_US
dc.contributor.authorRashid, Nen_US
dc.contributor.authorHussain, Ren_US
dc.contributor.authorMalik, M.Aen_US
dc.contributor.authorO'Brien, Pen_US
dc.contributor.authorWong, WTen_US
dc.date.accessioned2013-09-17T14:19:49Z-
dc.date.available2013-09-17T14:19:49Z-
dc.date.issued2013en_US
dc.identifier.citationNew Journal of Chemistry, 2013, v. 37 n. 10, 3214-3221en_US
dc.identifier.urihttp://hdl.handle.net/10722/188887-
dc.description.abstractCopper(II) complexes of various N-(dialkylcarbamothioyl)-nitrosubstituted benzamide [dialkyl = di-n-butyl (1a, 2a); hexyl, methyl (3a); butyl, ethyl (4a)] have been synthesized and characterized by elemental analysis, IR spectroscopy and atmospheric pressure chemical ionization-mass spectrometry (MS-APCI). The molecular structure of the complex 2a was determined by single-crystal X-ray diffraction. These complexes were used as single-source precursors for the deposition of copper sulfide thin films by aerosol assisted chemical vapour deposition (AA-CVD) at 350 °C. The powder X-ray diffraction (p-XRD) patterns of the thin films of complexes 3a and 4ashowed the deposition of rhombohedral digenite Cu9S5 phase, and complex 1a deposited monoclinic roxbyite Cu7S4 phase at 350 °C with spherical crystallites. Complex 2a deposited orthorhombic anilite Cu7S4 phase with spherical crystallites. The degree of roughness of the film surface was determined by atomic force microscopy (AFM). The scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDXA) results showed the uniform distribution of copper sulfide in the films, which makes them useful semiconducting materials on a structured surface.-
dc.languageengen_US
dc.relation.ispartofNew Journal of Chemistryen_US
dc.titleSemiconducting nanostructured copper sulfide thin films from bidentate copper(ii) complexes of N-(dialkylcarbamothioyl)-nitrosubstituted benzamides by chemical vapour depositionen_US
dc.typeArticleen_US
dc.identifier.emailWong, WT: wtwong@hku.hken_US
dc.identifier.authorityWong, WT=rp00811en_US
dc.identifier.doi10.1039/C3NJ00668A-
dc.identifier.scopuseid_2-s2.0-84884328524-
dc.identifier.hkuros222440en_US
dc.identifier.volume37-
dc.identifier.issue10-
dc.identifier.spage3214-
dc.identifier.epage3221-
dc.identifier.isiWOS:000324758700036-

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