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Conference Paper: Efficient mask synthesis with augmented Lagrangian methods in computational lithography

TitleEfficient mask synthesis with augmented Lagrangian methods in computational lithography
Authors
KeywordsAugmented Lagrangian methods
Computational lithographies
Equality constraints
Inverse lithography technologies
Objective functions
Issue Date2013
PublisherElectrochemical Society, Inc.. The Journal's web site is located at http://www.ecsdl.org/ECST/
Citation
The 2013 China Semiconductor Technology International Conference (CSTIC 2013), Shanghai, China, 19-21 March 2013. In ECS Transactions, 2013, v. 52 n. 1, p. 163-168 How to Cite?
AbstractA fast approach based on augmented Lagrangian methods (ALMs) is proposed to solve the inverse imaging problem in optical lithography, known as inverse lithography technology. We develop a constrained optimization framework where the objective function includes a data-fidelity term and a binary equality constraint. We show how optimal solutions are reached with less execution time by applying the quasi-Newton method to the sub-problem. The proposed scheme also includes a tentative penalty parameter schedule for adjustment and control. Simulation results are compared with existing source-mask optimization (SMO) to illustrate the performance improvement in terms of pattern fidelity, convergence rate and process window size. Copyright © 2013 by ECS - The Electrochemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/186794
ISSN
2015 SCImago Journal Rankings: 0.212
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLi, Jen_US
dc.contributor.authorLam, EYen_US
dc.date.accessioned2013-08-20T12:19:31Z-
dc.date.available2013-08-20T12:19:31Z-
dc.date.issued2013en_US
dc.identifier.citationThe 2013 China Semiconductor Technology International Conference (CSTIC 2013), Shanghai, China, 19-21 March 2013. In ECS Transactions, 2013, v. 52 n. 1, p. 163-168en_US
dc.identifier.issn1938-6737-
dc.identifier.urihttp://hdl.handle.net/10722/186794-
dc.description.abstractA fast approach based on augmented Lagrangian methods (ALMs) is proposed to solve the inverse imaging problem in optical lithography, known as inverse lithography technology. We develop a constrained optimization framework where the objective function includes a data-fidelity term and a binary equality constraint. We show how optimal solutions are reached with less execution time by applying the quasi-Newton method to the sub-problem. The proposed scheme also includes a tentative penalty parameter schedule for adjustment and control. Simulation results are compared with existing source-mask optimization (SMO) to illustrate the performance improvement in terms of pattern fidelity, convergence rate and process window size. Copyright © 2013 by ECS - The Electrochemical Society.-
dc.languageengen_US
dc.publisherElectrochemical Society, Inc.. The Journal's web site is located at http://www.ecsdl.org/ECST/-
dc.relation.ispartofECS Transactionsen_US
dc.rightsECS Transactions. Copyright © Electrochemical Society, Inc..-
dc.subjectAugmented Lagrangian methods-
dc.subjectComputational lithographies-
dc.subjectEquality constraints-
dc.subjectInverse lithography technologies-
dc.subjectObjective functions-
dc.titleEfficient mask synthesis with augmented Lagrangian methods in computational lithographyen_US
dc.typeConference_Paperen_US
dc.identifier.emailLam, EY: elam@eee.hku.hken_US
dc.identifier.authorityLam, EY=rp00131en_US
dc.identifier.doi10.1149/05201.0163ecst-
dc.identifier.scopuseid_2-s2.0-84875912919-
dc.identifier.hkuros220500en_US
dc.identifier.volume52-
dc.identifier.issue1-
dc.identifier.spage163-
dc.identifier.epage168-
dc.identifier.isiWOS:000338945700024-
dc.publisher.placeUnited States-
dc.customcontrol.immutablesml 130903-

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