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Conference Paper: Split-Drain Magnetic Field-Effect Transistor Channel Charge Trapping and Stress Induced Sensitivity Deterioration

TitleSplit-Drain Magnetic Field-Effect Transistor Channel Charge Trapping and Stress Induced Sensitivity Deterioration
Authors
Issue Date2014
Citation
The 3rd International Symposium on Advanced Magnetic Materials and Applications (ISAMMA), Taiwan, 21-25 July 2013. In IEEE Transactions on Magnetics, 2014, v. 50 n. 1, p. article no. 4000304 How to Cite?
AbstractThis paper proposed an analytical model on the deterioration of magnetic sensitivity of sectorial split-drain magnetic field-effect transistors (SD-MAGFETs). The deterioration is governed by the trap fill rate at the channel boundary traps, which is geometric dependent. Experimental results are presented which show good consistency with the analytical derivation. The deterioration is the most severe at a sector angle of 54.6°, which shows a design tradeoff with sensing hysteresis. Design guidelines for sectorial SD-MAGFET to obtain high sensitivity hysteresis and slow sensitivity deterioration are also presented which provide important information for efficient design. © 2013 IEEE.
DescriptionSession EB: Materials for Applications
Persistent Identifierhttp://hdl.handle.net/10722/186736
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorYang, Zen_US
dc.contributor.authorSiu, SLen_US
dc.contributor.authorTam, WSen_US
dc.contributor.authorKok, CWen_US
dc.contributor.authorLeung, CWen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorWong, Hen_US
dc.contributor.authorTang, WMen_US
dc.contributor.authorPong, PWT-
dc.date.accessioned2013-08-20T12:19:20Z-
dc.date.available2013-08-20T12:19:20Z-
dc.date.issued2014en_US
dc.identifier.citationThe 3rd International Symposium on Advanced Magnetic Materials and Applications (ISAMMA), Taiwan, 21-25 July 2013. In IEEE Transactions on Magnetics, 2014, v. 50 n. 1, p. article no. 4000304en_US
dc.identifier.otherThe 3rd International Symposium on Advanced Magnetic Materials and Applications (ISAMMA), Taiwan, 21-25 July 2013. In IEEE Transactions on Magnetics, 2014, v. 50 n. 1, p. article no. 4000304-
dc.identifier.urihttp://hdl.handle.net/10722/186736-
dc.descriptionSession EB: Materials for Applications-
dc.description.abstractThis paper proposed an analytical model on the deterioration of magnetic sensitivity of sectorial split-drain magnetic field-effect transistors (SD-MAGFETs). The deterioration is governed by the trap fill rate at the channel boundary traps, which is geometric dependent. Experimental results are presented which show good consistency with the analytical derivation. The deterioration is the most severe at a sector angle of 54.6°, which shows a design tradeoff with sensing hysteresis. Design guidelines for sectorial SD-MAGFET to obtain high sensitivity hysteresis and slow sensitivity deterioration are also presented which provide important information for efficient design. © 2013 IEEE.-
dc.languageengen_US
dc.relation.ispartofIEEE Transactions on Magneticsen_US
dc.rightsIEEE Transactions on Magnetics. Copyright © Institute of Electrical and Electronics Engineers.-
dc.rights©2014 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleSplit-Drain Magnetic Field-Effect Transistor Channel Charge Trapping and Stress Induced Sensitivity Deteriorationen_US
dc.typeConference_Paperen_US
dc.identifier.emailPong, PWT: ppong@eee.hku.hken_US
dc.identifier.authorityPong, PWT=rp00217en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/TMAG.2013.2279849-
dc.identifier.scopuseid_2-s2.0-84901643695-
dc.identifier.hkuros219837en_US
dc.identifier.hkuros235978-
dc.identifier.volume50-
dc.identifier.issue1-
dc.identifier.isiWOS:000330026800090-

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