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Article: ZnO nanowires array p-n homojunction and its application as a visible-blind ultraviolet photodetector

TitleZnO nanowires array p-n homojunction and its application as a visible-blind ultraviolet photodetector
Authors
Issue Date2010
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2010, v. 96 n. 5 How to Cite?
AbstractWe demonstrated a simple and low-cost fabrication of ZnO p-n homojunction. The junction consists of n -type ZnO nanowires array by a hydrothermal method covered with p -type Al, N co-doped ZnO film by a sol-gel method. The junction exhibits good rectification characteristics, with reverse leakage current and rectification ratio of ∼5 μA and ∼150 at bias of 3 V, respectively. The junction is operated as a photodetector when light radiation is shined on the glass-side of the device. The photodetector shows a peak responsivity at 384 nm with UV-visible responsivity ratio (R384 nm / R550 nm) of ∼70 at an operating bias of -3 V. © 2010 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/185480
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLeung, YHen_US
dc.contributor.authorHe, ZBen_US
dc.contributor.authorLuo, LBen_US
dc.contributor.authorTsang, CHAen_US
dc.contributor.authorWong, NBen_US
dc.contributor.authorZhang, WJen_US
dc.contributor.authorLee, STen_US
dc.date.accessioned2013-07-30T07:36:50Z-
dc.date.available2013-07-30T07:36:50Z-
dc.date.issued2010en_US
dc.identifier.citationApplied Physics Letters, 2010, v. 96 n. 5en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/185480-
dc.description.abstractWe demonstrated a simple and low-cost fabrication of ZnO p-n homojunction. The junction consists of n -type ZnO nanowires array by a hydrothermal method covered with p -type Al, N co-doped ZnO film by a sol-gel method. The junction exhibits good rectification characteristics, with reverse leakage current and rectification ratio of ∼5 μA and ∼150 at bias of 3 V, respectively. The junction is operated as a photodetector when light radiation is shined on the glass-side of the device. The photodetector shows a peak responsivity at 384 nm with UV-visible responsivity ratio (R384 nm / R550 nm) of ∼70 at an operating bias of -3 V. © 2010 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleZnO nanowires array p-n homojunction and its application as a visible-blind ultraviolet photodetectoren_US
dc.typeArticleen_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.3299269en_US
dc.identifier.scopuseid_2-s2.0-76449094855en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-76449094855&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume96en_US
dc.identifier.issue5en_US
dc.identifier.isiWOS:000274319500083-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridLeung, YH=16042693500en_US
dc.identifier.scopusauthoridHe, ZB=27168767500en_US
dc.identifier.scopusauthoridLuo, LB=8523035900en_US
dc.identifier.scopusauthoridTsang, CHA=25959398000en_US
dc.identifier.scopusauthoridWong, NB=7404340236en_US
dc.identifier.scopusauthoridZhang, WJ=37070726100en_US
dc.identifier.scopusauthoridLee, ST=7601407495en_US

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