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Article: Vertically aligned ZnO nanorod arrays sentisized with gold nanoparticles for schottky barrier photovoltaic cells

TitleVertically aligned ZnO nanorod arrays sentisized with gold nanoparticles for schottky barrier photovoltaic cells
Authors
Issue Date2009
PublisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journals/jpccck/
Citation
Journal Of Physical Chemistry C, 2009, v. 113 n. 30, p. 13433-13437 How to Cite?
AbstractVertically aligned zinc oxide (ZnO) nanorod arrays coated with gold nanoparticles have been used in Schottky barrier solar cells. The nanoparticles enhance the optical absorption in the range of visible light due to the surface plasmon resonance. In charge separations, photoexcited electrons are transferred from gold nanoparticles to the ZnO conduction band while electrons from donor (I -) in the electrolyte compensate the holes left on the gold nanoparticles. The fill factors of the dye-free Schottky barrier cell reach a value of and tild;0.50. However, after incorporation of N719 sensitizing dye, the open circuit voltage increases to 0.63 V from 0.5 V being measured for dye-sensitized solar cells based on the bare ZnO nanorods. The Schottky barrier at the ZnO/Au interface blocks the electron transfer back from ZnO to the dye and electrolyte, and thus increases the electron density at the ZnO conduction band. The efficiency of the gold-coated ZnO nanorod dye-sensitized solar cells is thus increased from 0.7% to 1.2%.and © 2009 American Chemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/185479
ISSN
2015 Impact Factor: 4.509
2015 SCImago Journal Rankings: 1.995
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChen, ZHen_US
dc.contributor.authorTang, YBen_US
dc.contributor.authorLiu, CPen_US
dc.contributor.authorLeung, YHen_US
dc.contributor.authorYuan, GDen_US
dc.contributor.authorChen, LMen_US
dc.contributor.authorWang, YQen_US
dc.contributor.authorBello, Ien_US
dc.contributor.authorZapien, JAen_US
dc.contributor.authorZhang, WJen_US
dc.contributor.authorLee, CSen_US
dc.contributor.authorLee, STen_US
dc.date.accessioned2013-07-30T07:36:49Z-
dc.date.available2013-07-30T07:36:49Z-
dc.date.issued2009en_US
dc.identifier.citationJournal Of Physical Chemistry C, 2009, v. 113 n. 30, p. 13433-13437en_US
dc.identifier.issn1932-7447en_US
dc.identifier.urihttp://hdl.handle.net/10722/185479-
dc.description.abstractVertically aligned zinc oxide (ZnO) nanorod arrays coated with gold nanoparticles have been used in Schottky barrier solar cells. The nanoparticles enhance the optical absorption in the range of visible light due to the surface plasmon resonance. In charge separations, photoexcited electrons are transferred from gold nanoparticles to the ZnO conduction band while electrons from donor (I -) in the electrolyte compensate the holes left on the gold nanoparticles. The fill factors of the dye-free Schottky barrier cell reach a value of and tild;0.50. However, after incorporation of N719 sensitizing dye, the open circuit voltage increases to 0.63 V from 0.5 V being measured for dye-sensitized solar cells based on the bare ZnO nanorods. The Schottky barrier at the ZnO/Au interface blocks the electron transfer back from ZnO to the dye and electrolyte, and thus increases the electron density at the ZnO conduction band. The efficiency of the gold-coated ZnO nanorod dye-sensitized solar cells is thus increased from 0.7% to 1.2%.and © 2009 American Chemical Society.en_US
dc.languageengen_US
dc.publisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journals/jpccck/en_US
dc.relation.ispartofJournal of Physical Chemistry Cen_US
dc.titleVertically aligned ZnO nanorod arrays sentisized with gold nanoparticles for schottky barrier photovoltaic cellsen_US
dc.typeArticleen_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1021/jp903153wen_US
dc.identifier.scopuseid_2-s2.0-68349101245en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-68349101245&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume113en_US
dc.identifier.issue30en_US
dc.identifier.spage13433en_US
dc.identifier.epage13437en_US
dc.identifier.isiWOS:000268233800074-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChen, ZH=55705677600en_US
dc.identifier.scopusauthoridTang, YB=25823954600en_US
dc.identifier.scopusauthoridLiu, CP=36713688300en_US
dc.identifier.scopusauthoridLeung, YH=16042693500en_US
dc.identifier.scopusauthoridYuan, GD=25723992900en_US
dc.identifier.scopusauthoridChen, LM=35209615000en_US
dc.identifier.scopusauthoridWang, YQ=36078931100en_US
dc.identifier.scopusauthoridBello, I=7006342215en_US
dc.identifier.scopusauthoridZapien, JA=6701453903en_US
dc.identifier.scopusauthoridZhang, WJ=37070726100en_US
dc.identifier.scopusauthoridLee, CS=16464316100en_US
dc.identifier.scopusauthoridLee, ST=7601407495en_US

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