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Article: Rectifying characteristics, magnetic tunability, and photovoltaic response in La0.8Hf0.2MnO3/0.7 wt% Nb-SrTiO3 heteroepitaxial junctions

TitleRectifying characteristics, magnetic tunability, and photovoltaic response in La0.8Hf0.2MnO3/0.7 wt% Nb-SrTiO3 heteroepitaxial junctions
Authors
KeywordsDiffusion voltage
Heteroepitaxial
Nb-doped srtio
Photo-voltage
Photovoltaic response
Issue Date2012
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2012, v. 111 n. 7, article no. 07D723 How to Cite?
AbstractHeterojunctions composed of tetravalent cation-doped La 0.8Hf 0.2MnO 3 (LHMO) and 0.7 wt Nb-doped SrTiO 3 were fabricated using pulsed laser deposition method and investigated under different fields (electric, magnetic, and optic). The heterojunctions exhibited excellent rectifying behavior in a wide temperature range and significant magnetic field modulated properties. Prominent photovoltaic effect was also observed in the formed junctions. Special attention has been paid to the temperature dependence of the diffusion voltage (V d) and photovoltage (V oc). When temperature increased from 40 K to 300 K, V d decreased from 1.13 V to 0.16 V. It is notable that, under illumination of a light with λ = 532 nm, V oc dropped from 650 to 80 mV. No sudden change of V d and V oc was observed at the metal-insulator transition temperature, which is probably caused by the band structure of the LHMO. © 2012 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/183664
ISSN
2017 Impact Factor: 2.176
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWu, ZP-
dc.contributor.authorWang, L-
dc.contributor.authorGao, J-
dc.date.accessioned2013-06-14T07:40:11Z-
dc.date.available2013-06-14T07:40:11Z-
dc.date.issued2012-
dc.identifier.citationJournal of Applied Physics, 2012, v. 111 n. 7, article no. 07D723-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10722/183664-
dc.description.abstractHeterojunctions composed of tetravalent cation-doped La 0.8Hf 0.2MnO 3 (LHMO) and 0.7 wt Nb-doped SrTiO 3 were fabricated using pulsed laser deposition method and investigated under different fields (electric, magnetic, and optic). The heterojunctions exhibited excellent rectifying behavior in a wide temperature range and significant magnetic field modulated properties. Prominent photovoltaic effect was also observed in the formed junctions. Special attention has been paid to the temperature dependence of the diffusion voltage (V d) and photovoltage (V oc). When temperature increased from 40 K to 300 K, V d decreased from 1.13 V to 0.16 V. It is notable that, under illumination of a light with λ = 532 nm, V oc dropped from 650 to 80 mV. No sudden change of V d and V oc was observed at the metal-insulator transition temperature, which is probably caused by the band structure of the LHMO. © 2012 American Institute of Physics.-
dc.languageeng-
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp-
dc.relation.ispartofJournal of Applied Physics-
dc.rightsCopyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2012, v. 111 n. 7, article no. 07D723 and may be found at https://doi.org/10.1063/1.3678491-
dc.subjectDiffusion voltage-
dc.subjectHeteroepitaxial-
dc.subjectNb-doped srtio-
dc.subjectPhoto-voltage-
dc.subjectPhotovoltaic response-
dc.titleRectifying characteristics, magnetic tunability, and photovoltaic response in La0.8Hf0.2MnO3/0.7 wt% Nb-SrTiO3 heteroepitaxial junctionsen_US
dc.typeArticleen_US
dc.identifier.emailWu, ZP: zpwuhku@hku.hk-
dc.identifier.emailWang, L: wanglin1@hku.hk-
dc.identifier.emailGao, J: jugao@hku.hk-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3678491-
dc.identifier.scopuseid_2-s2.0-84861734372-
dc.identifier.hkuros214841-
dc.identifier.volume111-
dc.identifier.issue7-
dc.identifier.spagearticle no. 07D723-
dc.identifier.epagearticle no. 07D723-
dc.identifier.isiWOS:000303282401186-
dc.publisher.placeUnited States-

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