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Article: Magnetic field mediated low-temperature resistivity upturn in electron-doped La1-xHfxMnO3 manganite oxides
Title | Magnetic field mediated low-temperature resistivity upturn in electron-doped La1-xHfxMnO3 manganite oxides |
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Authors | |
Issue Date | 2012 |
Publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp |
Citation | Journal of Applied Physics, 2012, v. 112 n. 12, article no. 123710, p. 1-7 How to Cite? |
Abstract | The low-temperature transport properties were systematically studied on the electron-doped polycrystalline La1−xHfxMnO3 (x = 0.2 and 0.3) compounds at the presence of external magnetic fields. The resistivity of all samples exhibits a generally low-temperature resistance upturn behavior under zero magnetic field at the temperature of Tmin, which first shifts towards lower temperature at low magnetic field (H < 0.75 T) and then moves back to higher temperature as magnetic fields increase, which is greatly different with the previous results on the hole-doped manganites. The best fitting of low-temperature resistivity could be made by considering both electron-electron (e-e) interactions in terms of T1/2 dependence and Kondo-like spin dependent scattering in terms of lnT dependence at all magnetic fields. Our results will be meaningful to understand the underlying physical mechanism of low-temperature resistivity minimum behavior in the electron-doped manganites. |
Persistent Identifier | http://hdl.handle.net/10722/181711 |
ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.649 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Guo, E | en_US |
dc.contributor.author | Wang, L | en_US |
dc.contributor.author | Wu, Z | en_US |
dc.contributor.author | Wang, L | en_US |
dc.contributor.author | Liu, HB | en_US |
dc.contributor.author | Jin, KJ | en_US |
dc.contributor.author | Gao, J | en_US |
dc.date.accessioned | 2013-03-19T03:54:37Z | - |
dc.date.available | 2013-03-19T03:54:37Z | - |
dc.date.issued | 2012 | en_US |
dc.identifier.citation | Journal of Applied Physics, 2012, v. 112 n. 12, article no. 123710, p. 1-7 | - |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/181711 | - |
dc.description.abstract | The low-temperature transport properties were systematically studied on the electron-doped polycrystalline La1−xHfxMnO3 (x = 0.2 and 0.3) compounds at the presence of external magnetic fields. The resistivity of all samples exhibits a generally low-temperature resistance upturn behavior under zero magnetic field at the temperature of Tmin, which first shifts towards lower temperature at low magnetic field (H < 0.75 T) and then moves back to higher temperature as magnetic fields increase, which is greatly different with the previous results on the hole-doped manganites. The best fitting of low-temperature resistivity could be made by considering both electron-electron (e-e) interactions in terms of T1/2 dependence and Kondo-like spin dependent scattering in terms of lnT dependence at all magnetic fields. Our results will be meaningful to understand the underlying physical mechanism of low-temperature resistivity minimum behavior in the electron-doped manganites. | - |
dc.language | eng | en_US |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | en_US |
dc.relation.ispartof | Journal Of Applied Physics | en_US |
dc.rights | Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2012, v. 112 n. 12, article no. 123710, p. 1-7 and may be found at https://doi.org/10.1063/1.4770320 | - |
dc.title | Magnetic field mediated low-temperature resistivity upturn in electron-doped La1-xHfxMnO3 manganite oxides | en_US |
dc.type | Article | en_US |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=112&spage=123710:1&epage=123710:7&date=2012&atitle=Magnetic+field+mediated+low-temperature+resistivity+upturn+in+electron-doped+La1-xHfxMnO3+manganite+oxides | en_US |
dc.identifier.email | Guo, E: ejguo@hku.hk | en_US |
dc.identifier.email | Wang, L: wanglin1@hku.hk | en_US |
dc.identifier.email | Wu, Z: zpwuhku@hku.hk | en_US |
dc.identifier.email | Gao, J: jugao@hku.hk | en_US |
dc.identifier.authority | Gao, J=rp00699 | en_US |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1063/1.4770320 | - |
dc.identifier.scopus | eid_2-s2.0-84886813280 | - |
dc.identifier.hkuros | 213494 | en_US |
dc.identifier.volume | 112 | en_US |
dc.identifier.issue | 12 | - |
dc.identifier.spage | article no. 123710, p. 1 | en_US |
dc.identifier.epage | article no. 123710, p. 7 | en_US |
dc.identifier.isi | WOS:000312829400053 | - |
dc.identifier.issnl | 0021-8979 | - |