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Article: Magnetic field mediated low-temperature resistivity upturn in electron-doped La1-xHfxMnO3 manganite oxides

TitleMagnetic field mediated low-temperature resistivity upturn in electron-doped La1-xHfxMnO3 manganite oxides
Authors
Issue Date2012
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2012, v. 112, p. 123710:1-123710:7 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/181711
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603

 

DC FieldValueLanguage
dc.contributor.authorGuo, Een_US
dc.contributor.authorWang, Len_US
dc.contributor.authorWu, Zen_US
dc.contributor.authorWang, Len_US
dc.contributor.authorLiu, HBen_US
dc.contributor.authorJin, KJen_US
dc.contributor.authorGao, Jen_US
dc.date.accessioned2013-03-19T03:54:37Z-
dc.date.available2013-03-19T03:54:37Z-
dc.date.issued2012en_US
dc.identifier.citationJournal Of Applied Physics, 2012, v. 112, p. 123710:1-123710:7en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/181711-
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal Of Applied Physicsen_US
dc.rightsJournal Of Applied Physics. Copyright © American Institute of Physics.en_US
dc.rightsAfter publication: Copyright (year) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (citation of published article) and may be found at (URL/link for published article abstract). Before publication: The following article has been submitted to/accepted by [Name of Journal]. After it is published, it will be found at (URL/link to the entry page of the journal).en_US
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleMagnetic field mediated low-temperature resistivity upturn in electron-doped La1-xHfxMnO3 manganite oxidesen_US
dc.typeArticleen_US
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=112&spage=123710:1&epage=123710:7&date=2012&atitle=Magnetic+field+mediated+low-temperature+resistivity+upturn+in+electron-doped+La1-xHfxMnO3+manganite+oxidesen_US
dc.identifier.emailGuo, E: ejguo@hku.hken_US
dc.identifier.emailWang, L: wanglin1@hku.hken_US
dc.identifier.emailWu, Z: zpwuhku@hku.hken_US
dc.identifier.emailGao, J: jugao@hku.hken_US
dc.identifier.authorityGao, J=rp00699en_US
dc.description.naturepublished_or_final_version-
dc.identifier.hkuros213494en_US
dc.identifier.volume112en_US
dc.identifier.spage123710:1en_US
dc.identifier.epage123710:7en_US

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