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Article: Can interference patterns in the reflectance spectra of GaN epilayers give important information of carrier concentration?

TitleCan interference patterns in the reflectance spectra of GaN epilayers give important information of carrier concentration?
Authors
KeywordsBand edge
Chemical vapour deposition
Doping concentration
Energy regions
Gan epilayers
Issue Date2012
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2012, v. 101 n. 19, article no. 191102, p. 1-3 How to Cite?
AbstractLow-temperature reflectance spectra of a series of Si-doped GaN epilayers with different doping concentrations grown on sapphire by metal-organic chemical vapour deposition were measured. In addition to the excitonic polariton resonance structures at the band edge, interference oscillating patterns were observed in the energy region well below the band gap. The amplitudes of these oscillation patterns show a distinct dependence on the doping concentrations of the samples. From the thin-film optical interference principle, an approach connecting the amplitude of the interference oscillations and the impurity scattering was established. Good agreement between experiment and theory is achieved. © 2012 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/180134
ISSN
2019 Impact Factor: 3.597
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZheng, CCen_US
dc.contributor.authorXu, Sen_US
dc.contributor.authorZhang, Fen_US
dc.contributor.authorNing, Jen_US
dc.contributor.authorZhao, DGen_US
dc.contributor.authorYang, Hen_US
dc.contributor.authorChe, CMen_US
dc.date.accessioned2013-01-21T01:29:29Z-
dc.date.available2013-01-21T01:29:29Z-
dc.date.issued2012en_US
dc.identifier.citationApplied Physics Letters, 2012, v. 101 n. 19, article no. 191102, p. 1-3-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/180134-
dc.description.abstractLow-temperature reflectance spectra of a series of Si-doped GaN epilayers with different doping concentrations grown on sapphire by metal-organic chemical vapour deposition were measured. In addition to the excitonic polariton resonance structures at the band edge, interference oscillating patterns were observed in the energy region well below the band gap. The amplitudes of these oscillation patterns show a distinct dependence on the doping concentrations of the samples. From the thin-film optical interference principle, an approach connecting the amplitude of the interference oscillations and the impurity scattering was established. Good agreement between experiment and theory is achieved. © 2012 American Institute of Physics.-
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.rightsCopyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2012, v. 101 n. 19, article no. 191102, p. 1-3 and may be found at https://doi.org/10.1063/1.4766188-
dc.subjectBand edge-
dc.subjectChemical vapour deposition-
dc.subjectDoping concentration-
dc.subjectEnergy regions-
dc.subjectGan epilayers-
dc.titleCan interference patterns in the reflectance spectra of GaN epilayers give important information of carrier concentration?en_US
dc.typeArticleen_US
dc.identifier.emailZheng, CC: cczheng@hku.hken_US
dc.identifier.emailXu, S: sjxu@hku.hken_US
dc.identifier.emailZhang, F: zhfhku@hku.hken_US
dc.identifier.emailNing, J: jqning@graduate.hku.hken_US
dc.identifier.emailChe, CM: cmche@hku.hken_US
dc.identifier.authorityXu, S=rp00821en_US
dc.identifier.authorityNing, J=rp00769en_US
dc.identifier.authorityChe, CM=rp00670en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4766188-
dc.identifier.scopuseid_2-s2.0-84869046691-
dc.identifier.hkuros212899en_US
dc.identifier.volume101en_US
dc.identifier.issue19-
dc.identifier.spagearticle no. 191102, p. 1-
dc.identifier.epagearticle no. 191102, p. 3-
dc.identifier.isiWOS:000311320100002-
dc.publisher.placeUnited States-

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