File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Can interference patterns in the reflectance spectra of GaN epilayers give important information of carrier concentration?

TitleCan interference patterns in the reflectance spectra of GaN epilayers give important information of carrier concentration?
Authors
KeywordsBand edge
Chemical vapour deposition
Doping concentration
Energy regions
Gan epilayers
Issue Date2012
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2012, v. 101 n. 19, p. 191102:1-191102:3 How to Cite?
AbstractLow-temperature reflectance spectra of a series of Si-doped GaN epilayers with different doping concentrations grown on sapphire by metal-organic chemical vapour deposition were measured. In addition to the excitonic polariton resonance structures at the band edge, interference oscillating patterns were observed in the energy region well below the band gap. The amplitudes of these oscillation patterns show a distinct dependence on the doping concentrations of the samples. From the thin-film optical interference principle, an approach connecting the amplitude of the interference oscillations and the impurity scattering was established. Good agreement between experiment and theory is achieved. © 2012 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/180134
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZheng, CCen_US
dc.contributor.authorXu, Sen_US
dc.contributor.authorZhang, Fen_US
dc.contributor.authorNing, Jen_US
dc.contributor.authorZhao, DGen_US
dc.contributor.authorYang, Hen_US
dc.contributor.authorChe, CMen_US
dc.date.accessioned2013-01-21T01:29:29Z-
dc.date.available2013-01-21T01:29:29Z-
dc.date.issued2012en_US
dc.identifier.citationApplied Physics Letters, 2012, v. 101 n. 19, p. 191102:1-191102:3en_US
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/180134-
dc.description.abstractLow-temperature reflectance spectra of a series of Si-doped GaN epilayers with different doping concentrations grown on sapphire by metal-organic chemical vapour deposition were measured. In addition to the excitonic polariton resonance structures at the band edge, interference oscillating patterns were observed in the energy region well below the band gap. The amplitudes of these oscillation patterns show a distinct dependence on the doping concentrations of the samples. From the thin-film optical interference principle, an approach connecting the amplitude of the interference oscillations and the impurity scattering was established. Good agreement between experiment and theory is achieved. © 2012 American Institute of Physics.-
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_US
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectBand edge-
dc.subjectChemical vapour deposition-
dc.subjectDoping concentration-
dc.subjectEnergy regions-
dc.subjectGan epilayers-
dc.titleCan interference patterns in the reflectance spectra of GaN epilayers give important information of carrier concentration?en_US
dc.typeArticleen_US
dc.identifier.emailZheng, CC: cczheng@hku.hken_US
dc.identifier.emailXu, S: sjxu@hku.hken_US
dc.identifier.emailZhang, F: zhfhku@hku.hken_US
dc.identifier.emailNing, J: jqning@graduate.hku.hken_US
dc.identifier.emailChe, CM: cmche@hku.hken_US
dc.identifier.authorityXu, S=rp00821en_US
dc.identifier.authorityNing, J=rp00769en_US
dc.identifier.authorityChe, CM=rp00670en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4766188-
dc.identifier.scopuseid_2-s2.0-84869046691-
dc.identifier.hkuros212899en_US
dc.identifier.volume101en_US
dc.identifier.issue19-
dc.identifier.spage191102:1en_US
dc.identifier.epage191102:3en_US
dc.identifier.isiWOS:000311320100002-
dc.publisher.placeUnited States-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats