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Conference Paper: Thermal process induced change of conductivity in As-doped ZnO

TitleThermal process induced change of conductivity in As-doped ZnO
Authors
KeywordsArsenic Doped
Compensation
P-Type Doping
Shallow Acceptor
Zn-Vacancy
Zno
Issue Date2012
PublisherSPIE - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
Citation
The Oxide-based Materials and Devices III Conference, San Francisco, CA., 21-26 January 2012. In Proceedings of SPIE, 2012, v. 8263, article no. 82630A How to Cite?
AbstractArsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method with different substrate temperature T S. Growing with the low substrate temperature of T S=200°C yielded n-type semi-insulating sample. Increasing the substrate temperature would yield p-type ZnO film and reproducible p-type film could be produced at T S∼ 450°C. Post-growth annealing of the n-type As-doped ZnO sample grown at the low substrate temperature (T S=200°C) in air at 500°C also converted the film to p-type conductivity. Further increasing the post-growth annealing temperature would convert the p-type sample back to n-type. With the results obtained from the studies of positron annihilation spectroscopy (PAS), photoluminescence (PL), cathodoluminescence (CL), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS) and nuclear reaction analysis (NRA), we have proposed mechanisms to explain for the thermal process induced conduction type conversion as observed in the As-doped ZnO films. © 2012 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).
DescriptionSPIE Proceedings v.8263 entitled: Oxide-based Materials and Devices III ... San Francisco, California ... 2012
Persistent Identifierhttp://hdl.handle.net/10722/176217
ISSN
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorSu, SCen_US
dc.contributor.authorFan, JCen_US
dc.contributor.authorLing, CCen_US
dc.date.accessioned2012-11-26T09:06:56Z-
dc.date.available2012-11-26T09:06:56Z-
dc.date.issued2012en_US
dc.identifier.citationThe Oxide-based Materials and Devices III Conference, San Francisco, CA., 21-26 January 2012. In Proceedings of SPIE, 2012, v. 8263, article no. 82630Aen_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/10722/176217-
dc.descriptionSPIE Proceedings v.8263 entitled: Oxide-based Materials and Devices III ... San Francisco, California ... 2012-
dc.description.abstractArsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method with different substrate temperature T S. Growing with the low substrate temperature of T S=200°C yielded n-type semi-insulating sample. Increasing the substrate temperature would yield p-type ZnO film and reproducible p-type film could be produced at T S∼ 450°C. Post-growth annealing of the n-type As-doped ZnO sample grown at the low substrate temperature (T S=200°C) in air at 500°C also converted the film to p-type conductivity. Further increasing the post-growth annealing temperature would convert the p-type sample back to n-type. With the results obtained from the studies of positron annihilation spectroscopy (PAS), photoluminescence (PL), cathodoluminescence (CL), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS) and nuclear reaction analysis (NRA), we have proposed mechanisms to explain for the thermal process induced conduction type conversion as observed in the As-doped ZnO films. © 2012 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).en_US
dc.languageengen_US
dc.publisherSPIE - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xmlen_US
dc.relation.ispartofProceedings of SPIEen_US
dc.subjectArsenic Dopeden_US
dc.subjectCompensationen_US
dc.subjectP-Type Dopingen_US
dc.subjectShallow Acceptoren_US
dc.subjectZn-Vacancyen_US
dc.subjectZnoen_US
dc.titleThermal process induced change of conductivity in As-doped ZnOen_US
dc.typeConference_Paperen_US
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_US
dc.identifier.authorityLing, CC=rp00747en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1117/12.913543en_US
dc.identifier.scopuseid_2-s2.0-84858604444en_US
dc.identifier.hkuros198748-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84858604444&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume8263en_US
dc.identifier.isiWOS:000303381200007-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridSu, SC=55110564600en_US
dc.identifier.scopusauthoridFan, JC=36019048800en_US
dc.identifier.scopusauthoridLing, CC=13310239300en_US

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