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Conference Paper: Synthesis of tin oxide, indium oxide and tin-doped indium oxide nanowires by chemical vapor deposition
Title | Synthesis of tin oxide, indium oxide and tin-doped indium oxide nanowires by chemical vapor deposition |
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Authors | |
Keywords | Chemical Vapor Deposition Metal Oxides Nanowires |
Issue Date | 2011 |
Publisher | S P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml |
Citation | Proceedings Of Spie - The International Society For Optical Engineering, 2011, v. 8094 How to Cite? |
Abstract | Nanostructures of the tin oxide, indium oxide and tin-doped indium oxide have been fabricated on silicon by chemical vapor deposition from a mixture of metal oxide nanoparticles and single-wall carbon nanotubes (SWCNT). Different ratios of the metal oxide to SWCNT have been used. It was found that the morphology of the nanostructures depends on the substrate temperature. The morphology, growth direction and optical properties have been studied by scanning electron microscopy, transmission electron microscopy and photoluminescence spectroscopy. © 2011 SPIE. |
Persistent Identifier | http://hdl.handle.net/10722/176215 |
ISSN | 2023 SCImago Journal Rankings: 0.152 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Wong, KK | en_US |
dc.contributor.author | Fung, MK | en_US |
dc.contributor.author | Sun, YC | en_US |
dc.contributor.author | Chen, XY | en_US |
dc.contributor.author | Ng, AMC | en_US |
dc.contributor.author | Djurišić, AB | en_US |
dc.contributor.author | Chan, WK | en_US |
dc.date.accessioned | 2012-11-26T09:06:55Z | - |
dc.date.available | 2012-11-26T09:06:55Z | - |
dc.date.issued | 2011 | en_US |
dc.identifier.citation | Proceedings Of Spie - The International Society For Optical Engineering, 2011, v. 8094 | en_US |
dc.identifier.issn | 0277-786X | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/176215 | - |
dc.description.abstract | Nanostructures of the tin oxide, indium oxide and tin-doped indium oxide have been fabricated on silicon by chemical vapor deposition from a mixture of metal oxide nanoparticles and single-wall carbon nanotubes (SWCNT). Different ratios of the metal oxide to SWCNT have been used. It was found that the morphology of the nanostructures depends on the substrate temperature. The morphology, growth direction and optical properties have been studied by scanning electron microscopy, transmission electron microscopy and photoluminescence spectroscopy. © 2011 SPIE. | en_US |
dc.language | eng | en_US |
dc.publisher | S P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml | en_US |
dc.relation.ispartof | Proceedings of SPIE - The International Society for Optical Engineering | en_US |
dc.subject | Chemical Vapor Deposition | en_US |
dc.subject | Metal Oxides | en_US |
dc.subject | Nanowires | en_US |
dc.title | Synthesis of tin oxide, indium oxide and tin-doped indium oxide nanowires by chemical vapor deposition | en_US |
dc.type | Conference_Paper | en_US |
dc.identifier.email | Djurišić, AB: dalek@hku.hk | en_US |
dc.identifier.authority | Djurišić, AB=rp00690 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1117/12.892436 | en_US |
dc.identifier.scopus | eid_2-s2.0-80053548584 | en_US |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-80053548584&selection=ref&src=s&origin=recordpage | en_US |
dc.identifier.volume | 8094 | en_US |
dc.identifier.isi | WOS:000297593200017 | - |
dc.publisher.place | United States | en_US |
dc.identifier.scopusauthorid | Wong, KK=37056419600 | en_US |
dc.identifier.scopusauthorid | Fung, MK=35191896100 | en_US |
dc.identifier.scopusauthorid | Sun, YC=36572487500 | en_US |
dc.identifier.scopusauthorid | Chen, XY=35182594600 | en_US |
dc.identifier.scopusauthorid | Ng, AMC=12140078600 | en_US |
dc.identifier.scopusauthorid | Djurišić, AB=7004904830 | en_US |
dc.identifier.scopusauthorid | Chan, WK=7403917961 | en_US |
dc.identifier.issnl | 0277-786X | - |