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Conference Paper: Electrical characterization of N +-implanted n-type ZnO single crystals: p-n homojunction and deep level defects

TitleElectrical characterization of N +-implanted n-type ZnO single crystals: p-n homojunction and deep level defects
Authors
Issue Date2008
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Materials Research Society Symposium Proceedings, 2008, v. 1035, p. 128-133 How to Cite?
AbstractUnintentionally doped n-type ZnO single crystals were implanted by nitrogen ions with different fluences of 10 13, 10 14 and 10 15 cm -2 respectively. ZnO p-n homojunction was successfully fabricated due to the formation of p-type layer after 650°C post-implantation annealing in air for 30 minutes. Further thermal evolution of deep level defects was studied through thermal annealing up to 1200°C. Electrical characterization techniques including current-voltage (I-V), capacitance-voltage (C-V), Deep Level Transient Spectroscopy (DLTS) and double-correlation DLTS (DDLTS) were used for investigating the control sample, all the as-implanted and annealed samples through Au/n-ZnO Schottky diodes and ZnO p-n junctions. Detailed electrical properties of fabricated devices and characteristics of implantation induced defects were analyzed based on plentiful spectra. Moreover, low-temperature photoluminescence (LTPL) experiments of all the as-implanted and annealed samples were performed and the correlation between results from electrical and optical characterizations was discussed. © 2008 Materials Research Society.
Persistent Identifierhttp://hdl.handle.net/10722/176200
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorGu, Qen_US
dc.contributor.authorDai, Xen_US
dc.contributor.authorLing, CCen_US
dc.contributor.authorXu, Sen_US
dc.contributor.authorLu, Len_US
dc.contributor.authorBrauer, Gen_US
dc.contributor.authorAnwand, Wen_US
dc.contributor.authorSkorupa, Wen_US
dc.date.accessioned2012-11-26T09:06:49Z-
dc.date.available2012-11-26T09:06:49Z-
dc.date.issued2008en_US
dc.identifier.citationMaterials Research Society Symposium Proceedings, 2008, v. 1035, p. 128-133en_US
dc.identifier.issn0272-9172en_US
dc.identifier.urihttp://hdl.handle.net/10722/176200-
dc.description.abstractUnintentionally doped n-type ZnO single crystals were implanted by nitrogen ions with different fluences of 10 13, 10 14 and 10 15 cm -2 respectively. ZnO p-n homojunction was successfully fabricated due to the formation of p-type layer after 650°C post-implantation annealing in air for 30 minutes. Further thermal evolution of deep level defects was studied through thermal annealing up to 1200°C. Electrical characterization techniques including current-voltage (I-V), capacitance-voltage (C-V), Deep Level Transient Spectroscopy (DLTS) and double-correlation DLTS (DDLTS) were used for investigating the control sample, all the as-implanted and annealed samples through Au/n-ZnO Schottky diodes and ZnO p-n junctions. Detailed electrical properties of fabricated devices and characteristics of implantation induced defects were analyzed based on plentiful spectra. Moreover, low-temperature photoluminescence (LTPL) experiments of all the as-implanted and annealed samples were performed and the correlation between results from electrical and optical characterizations was discussed. © 2008 Materials Research Society.en_US
dc.languageengen_US
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_US
dc.relation.ispartofMaterials Research Society Symposium Proceedingsen_US
dc.titleElectrical characterization of N +-implanted n-type ZnO single crystals: p-n homojunction and deep level defectsen_US
dc.typeConference_Paperen_US
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_US
dc.identifier.emailXu, S: sjxu@hku.hken_US
dc.identifier.authorityLing, CC=rp00747en_US
dc.identifier.authorityXu, S=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-70350332196en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-70350332196&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume1035en_US
dc.identifier.spage128en_US
dc.identifier.epage133en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridGu, Q=16067090400en_US
dc.identifier.scopusauthoridDai, X=25960763800en_US
dc.identifier.scopusauthoridLing, CC=13310239300en_US
dc.identifier.scopusauthoridXu, S=7404439005en_US
dc.identifier.scopusauthoridLu, L=7403963183en_US
dc.identifier.scopusauthoridBrauer, G=7101650540en_US
dc.identifier.scopusauthoridAnwand, W=9432786300en_US
dc.identifier.scopusauthoridSkorupa, W=7102608722en_US

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