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Conference Paper: Low temperature ferromagnetism of GaMnN grown on 6H-SiC (0001) by molecular beam epitaxy

TitleLow temperature ferromagnetism of GaMnN grown on 6H-SiC (0001) by molecular beam epitaxy
Authors
Cai, XMDjurišić, ABXie, MHLiu, HZhang, XX
KeywordsCurie Temperature
Ferromagnetism
Gamnn
Issue Date2005
Citation
Conference On Optoelectronic And Microelectronic Materials And Devices, Proceedings, Commad, 2005, p. 49-52 How to Cite?
DOI: http://dx.doi.org/10.1109/COMMAD.2004.1577489
AbstractGaMnN films with ∼3 at. % Mn were grown on 6H SiC (0001) by plasma-assisted molecular beam epitaxy (MBE). The samples were characterized by X-ray diffraction (XRD), photoluminescence (PL), and superconducting quantum interference device (SQUID). The samples exhibited ferromagnetic properties at low temperature. The highest obtained Curie temperature Tc was 56K. The origin of the ferromagnetic properties was discussed. © 2005 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/176192
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorCai, XMen_US
dc.contributor.authorDjurišić, ABen_US
dc.contributor.authorXie, MHen_US
dc.contributor.authorLiu, Hen_US
dc.contributor.authorZhang, XXen_US
dc.date.accessioned2012-11-26T09:06:43Z-
dc.date.available2012-11-26T09:06:43Z-
dc.date.issued2005en_US
dc.identifier.citationConference On Optoelectronic And Microelectronic Materials And Devices, Proceedings, Commad, 2005, p. 49-52en_US
dc.identifier.urihttp://hdl.handle.net/10722/176192-
dc.description.abstractGaMnN films with ∼3 at. % Mn were grown on 6H SiC (0001) by plasma-assisted molecular beam epitaxy (MBE). The samples were characterized by X-ray diffraction (XRD), photoluminescence (PL), and superconducting quantum interference device (SQUID). The samples exhibited ferromagnetic properties at low temperature. The highest obtained Curie temperature Tc was 56K. The origin of the ferromagnetic properties was discussed. © 2005 IEEE.en_US
dc.languageengen_US
dc.relation.ispartofConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMADen_US
dc.subjectCurie Temperatureen_US
dc.subjectFerromagnetismen_US
dc.subjectGamnnen_US
dc.titleLow temperature ferromagnetism of GaMnN grown on 6H-SiC (0001) by molecular beam epitaxyen_US
dc.typeConference_Paperen_US
dc.identifier.emailDjurišić, AB: dalek@hku.hken_US
dc.identifier.emailXie, MH: mhxie@hku.hken_US
dc.identifier.authorityDjurišić, AB=rp00690en_US
dc.identifier.authorityXie, MH=rp00818en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/COMMAD.2004.1577489en_US
dc.identifier.scopuseid_2-s2.0-46149098451en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-46149098451&selection=ref&src=s&origin=recordpageen_US
dc.identifier.spage49en_US
dc.identifier.epage52en_US
dc.identifier.scopusauthoridCai, XM=8923610200en_US
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_US
dc.identifier.scopusauthoridXie, MH=7202255416en_US
dc.identifier.scopusauthoridLiu, H=36066241300en_US
dc.identifier.scopusauthoridZhang, XX=7410264997en_US

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