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Conference Paper: Rapid P-injection in-situ synthesis and growth large diameter LEC InP single crystal

TitleRapid P-injection in-situ synthesis and growth large diameter LEC InP single crystal
Authors
Issue Date2002
Citation
Conference Proceedings - International Conference On Indium Phosphide And Related Materials, 2002, p. 401-404 How to Cite?
AbstractA method for the rapid synthesis of InP crystal by the injection of 730g phosphorous to B2O3 encapsulated 2700g Indium in 60-70 minutes was developed. Polycrystalline ingots of INP were synthesized using this technique to determine that which combination provided material with the highest purity and lowest silicon contamination. The derived method was highly efficient, less costly and suited large scale production. It could be used to prepare all binary and ternary III-V compound semiconductors with one or two volatile components.
Persistent Identifierhttp://hdl.handle.net/10722/176163
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorSun, Nen_HK
dc.contributor.authorWu, Xen_HK
dc.contributor.authorZhao, Yen_HK
dc.contributor.authorShen, Nen_HK
dc.contributor.authorChen, Xen_HK
dc.contributor.authorPu, Cen_HK
dc.contributor.authorBi, Ken_HK
dc.contributor.authorYang, Gen_HK
dc.contributor.authorXu, Yen_HK
dc.contributor.authorYang, Ken_HK
dc.contributor.authorZhao, Zen_HK
dc.contributor.authorSun, Ten_HK
dc.contributor.authorGuo, Wen_HK
dc.contributor.authorLin, Len_HK
dc.contributor.authorWang, Len_HK
dc.contributor.authorZhao, Qen_HK
dc.contributor.authorHuang, Yen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2012-11-26T09:06:32Z-
dc.date.available2012-11-26T09:06:32Z-
dc.date.issued2002en_HK
dc.identifier.citationConference Proceedings - International Conference On Indium Phosphide And Related Materials, 2002, p. 401-404en_US
dc.identifier.issn1092-8669en_HK
dc.identifier.urihttp://hdl.handle.net/10722/176163-
dc.description.abstractA method for the rapid synthesis of InP crystal by the injection of 730g phosphorous to B2O3 encapsulated 2700g Indium in 60-70 minutes was developed. Polycrystalline ingots of INP were synthesized using this technique to determine that which combination provided material with the highest purity and lowest silicon contamination. The derived method was highly efficient, less costly and suited large scale production. It could be used to prepare all binary and ternary III-V compound semiconductors with one or two volatile components.en_HK
dc.languageengen_US
dc.relation.ispartofConference Proceedings - International Conference on Indium Phosphide and Related Materialsen_HK
dc.titleRapid P-injection in-situ synthesis and growth large diameter LEC InP single crystalen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0036047876en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0036047876&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage401en_HK
dc.identifier.epage404en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridSun, N=7202556986en_HK
dc.identifier.scopusauthoridWu, X=7407063392en_HK
dc.identifier.scopusauthoridZhao, Y=7406633326en_HK
dc.identifier.scopusauthoridShen, N=7102785740en_HK
dc.identifier.scopusauthoridChen, X=26642908200en_HK
dc.identifier.scopusauthoridPu, C=55419723900en_HK
dc.identifier.scopusauthoridBi, K=7004436355en_HK
dc.identifier.scopusauthoridYang, G=8693019600en_HK
dc.identifier.scopusauthoridXu, Y=37035703100en_HK
dc.identifier.scopusauthoridYang, K=14326327100en_HK
dc.identifier.scopusauthoridZhao, Z=7404148480en_HK
dc.identifier.scopusauthoridSun, T=7402922751en_HK
dc.identifier.scopusauthoridGuo, W=7401967706en_HK
dc.identifier.scopusauthoridLin, L=7404131111en_HK
dc.identifier.scopusauthoridWang, L=7409177288en_HK
dc.identifier.scopusauthoridZhao, Q=55479203400en_HK
dc.identifier.scopusauthoridHuang, Y=23977949200en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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