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Conference Paper: Investigation of phonon-assisted photoluminescence in wurtzite GaN epilayer

TitleInvestigation of phonon-assisted photoluminescence in wurtzite GaN epilayer
Authors
KeywordsExciton
Exciton Linewidth
Exciton-Phonon Interaction
Gan
Phonon
Photoluminescence
Issue Date1998
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
Citation
Proceedings Of Spie - The International Society For Optical Engineering, 1998, v. 3419, p. 27-34 How to Cite?
AbstractPhotoluminescence of wurztite GaN epilayer was measured in the range of 4 K to 300 K. At low temperature, the neutral-donor bound exciton emission dominates the spectra, while with increasing temperature, free exciton emissions grow rapidly and finally become the dominant lines. The exciton linewidth due to exciton-phonon interaction was studied. LO phonon-assisted photoluminescence associated with both the bound exciton and the flee exciton were also observed. The temperature dependence of LO phonon-assisted emissions can be well explained by the phonon-assisted free exciton emission theory established for II-VI compound semiconductors. In particular, the study of 2LO phonon replica can provide information of the temperature dependence of the concentration and recombination lifetime of free excitons in GaN.
Persistent Identifierhttp://hdl.handle.net/10722/176149
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorLiu, Wen_US
dc.contributor.authorLi, MFen_US
dc.contributor.authorXu, SJen_US
dc.contributor.authorUchida, Ken_US
dc.contributor.authorMatsumoto, Ken_US
dc.date.accessioned2012-11-26T09:06:26Z-
dc.date.available2012-11-26T09:06:26Z-
dc.date.issued1998en_US
dc.identifier.citationProceedings Of Spie - The International Society For Optical Engineering, 1998, v. 3419, p. 27-34en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/10722/176149-
dc.description.abstractPhotoluminescence of wurztite GaN epilayer was measured in the range of 4 K to 300 K. At low temperature, the neutral-donor bound exciton emission dominates the spectra, while with increasing temperature, free exciton emissions grow rapidly and finally become the dominant lines. The exciton linewidth due to exciton-phonon interaction was studied. LO phonon-assisted photoluminescence associated with both the bound exciton and the flee exciton were also observed. The temperature dependence of LO phonon-assisted emissions can be well explained by the phonon-assisted free exciton emission theory established for II-VI compound semiconductors. In particular, the study of 2LO phonon replica can provide information of the temperature dependence of the concentration and recombination lifetime of free excitons in GaN.en_US
dc.languageengen_US
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xmlen_US
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineeringen_US
dc.subjectExcitonen_US
dc.subjectExciton Linewidthen_US
dc.subjectExciton-Phonon Interactionen_US
dc.subjectGanen_US
dc.subjectPhononen_US
dc.subjectPhotoluminescenceen_US
dc.titleInvestigation of phonon-assisted photoluminescence in wurtzite GaN epilayeren_US
dc.typeConference_Paperen_US
dc.identifier.emailXu, SJ: sjxu@hku.hken_US
dc.identifier.authorityXu, SJ=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1117/12.311027en_US
dc.identifier.scopuseid_2-s2.0-0032404003en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032404003&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume3419en_US
dc.identifier.spage27en_US
dc.identifier.epage34en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridLiu, W=36078712200en_US
dc.identifier.scopusauthoridLi, MF=7405260803en_US
dc.identifier.scopusauthoridXu, SJ=7404439005en_US
dc.identifier.scopusauthoridUchida, K=7404384781en_US
dc.identifier.scopusauthoridMatsumoto, K=7601605371en_US

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