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Article: Optical properties of δ-doped GaAs and GaAs/Al 0.1Ga 0.9As superlattices

TitleOptical properties of δ-doped GaAs and GaAs/Al 0.1Ga 0.9As superlattices
Authors
Issue Date1996
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/cp
Citation
Chinese Physics, 1996, v. 5 n. 6, p. 463-469 How to Cite?
AbstractRadiative transition in δ-doped GaAs superlattices with and without Al 0.1Ga 0.9As barriers is investigated by using photoluminescence at low temperatures. The experimental results show that the transition mechanism of δ-doped superlattices is very different from that of ordinary superlattices. Emission intensity of the transition from the electron first excited state to hole states is obviously stronger than that from the electron ground state to hole states due to larger overlap integral between wavefunctions of electrons in the first excited state and hole states. Based on the effective mass theory we have calculated the self-consistent potentials, optical transition matrix elements and photoluminescence spectra for two different samples. By using this model we can explain the main optical characteristics measured. Moreover, after taking into account the bandgap renormalization energy, good agreement between experiment and theory is obtained. © 1996 Chin. Phys. Soc.
Persistent Identifierhttp://hdl.handle.net/10722/175231
ISSN
2009 Impact Factor: 1.343
2010 SCImago Journal Rankings: 0.360
References

 

DC FieldValueLanguage
dc.contributor.authorCheng, WCen_US
dc.contributor.authorXia, JBen_US
dc.contributor.authorXu, SJen_US
dc.contributor.authorZheng, HZen_US
dc.contributor.authorLuo, KJen_US
dc.contributor.authorZhang, PHen_US
dc.contributor.authorYang, XPen_US
dc.date.accessioned2012-11-26T08:55:03Z-
dc.date.available2012-11-26T08:55:03Z-
dc.date.issued1996en_US
dc.identifier.citationChinese Physics, 1996, v. 5 n. 6, p. 463-469en_US
dc.identifier.issn1009-1963en_US
dc.identifier.urihttp://hdl.handle.net/10722/175231-
dc.description.abstractRadiative transition in δ-doped GaAs superlattices with and without Al 0.1Ga 0.9As barriers is investigated by using photoluminescence at low temperatures. The experimental results show that the transition mechanism of δ-doped superlattices is very different from that of ordinary superlattices. Emission intensity of the transition from the electron first excited state to hole states is obviously stronger than that from the electron ground state to hole states due to larger overlap integral between wavefunctions of electrons in the first excited state and hole states. Based on the effective mass theory we have calculated the self-consistent potentials, optical transition matrix elements and photoluminescence spectra for two different samples. By using this model we can explain the main optical characteristics measured. Moreover, after taking into account the bandgap renormalization energy, good agreement between experiment and theory is obtained. © 1996 Chin. Phys. Soc.en_US
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/cpen_US
dc.relation.ispartofChinese Physicsen_US
dc.titleOptical properties of δ-doped GaAs and GaAs/Al 0.1Ga 0.9As superlatticesen_US
dc.typeArticleen_US
dc.identifier.emailXu, SJ: sjxu@hku.hken_US
dc.identifier.authorityXu, SJ=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-9644266957en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-9644266957&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume5en_US
dc.identifier.issue6en_US
dc.identifier.spage463en_US
dc.identifier.epage469en_US
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridCheng, WC=7402169417en_US
dc.identifier.scopusauthoridXia, JB=7402327189en_US
dc.identifier.scopusauthoridXu, SJ=7404439005en_US
dc.identifier.scopusauthoridZheng, HZ=7403440708en_US
dc.identifier.scopusauthoridLuo, KJ=7102436141en_US
dc.identifier.scopusauthoridZhang, PH=7404159733en_US
dc.identifier.scopusauthoridYang, XP=7406502463en_US

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