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Article: Resistive switching and threshold switching behaviors in La 0.1Bi 0.9Fe 1-xCo xO 3 ceramics

TitleResistive switching and threshold switching behaviors in La 0.1Bi 0.9Fe 1-xCo xO 3 ceramics
Authors
Issue Date2012
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2012, v. 112 n. 3 How to Cite?
AbstractThe effects of cobalt doping on the electrical conductivity of La 0.1Bi 0.9Fe 1-xCo xO 3 (LBFCO, x=0, 0.01, 0.03) ceramics were investigated. It is found that the leakage current increases with cobalt dopant concentration in LBFCO. On the application of bias voltage LBFCO ceramics with cobalt doping exhibits resistive switching effects at room temperature and threshold switching effects at elevated temperatures (50°C and 80°C). X-ray photoelectron spectroscopy of LBFCO ceramics show that cobalt dopant is bivalent as an acceptor, which induces an enhancement of oxygen vacancy concentration in LBFCO ceramics. Possible mechanisms for both resistive switching and threshold switching effects are discussed on the basis of the interplay of bound ferroelectric charges and mobile charged defects. © 2012 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/175214
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorWang, SYen_US
dc.contributor.authorLiu, WFen_US
dc.contributor.authorGao, Jen_US
dc.contributor.authorQiu, Xen_US
dc.contributor.authorFeng, Yen_US
dc.contributor.authorHou, XGen_US
dc.contributor.authorYu, DSen_US
dc.contributor.authorLi, DJen_US
dc.date.accessioned2012-11-26T08:54:32Z-
dc.date.available2012-11-26T08:54:32Z-
dc.date.issued2012en_US
dc.identifier.citationJournal Of Applied Physics, 2012, v. 112 n. 3en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/175214-
dc.description.abstractThe effects of cobalt doping on the electrical conductivity of La 0.1Bi 0.9Fe 1-xCo xO 3 (LBFCO, x=0, 0.01, 0.03) ceramics were investigated. It is found that the leakage current increases with cobalt dopant concentration in LBFCO. On the application of bias voltage LBFCO ceramics with cobalt doping exhibits resistive switching effects at room temperature and threshold switching effects at elevated temperatures (50°C and 80°C). X-ray photoelectron spectroscopy of LBFCO ceramics show that cobalt dopant is bivalent as an acceptor, which induces an enhancement of oxygen vacancy concentration in LBFCO ceramics. Possible mechanisms for both resistive switching and threshold switching effects are discussed on the basis of the interplay of bound ferroelectric charges and mobile charged defects. © 2012 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.-
dc.rightsCopyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal Of Applied Physics, 2012, v. 112 n. 3 and may be found at http://dx.doi.org/10.1063/1.4743013.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleResistive switching and threshold switching behaviors in La 0.1Bi 0.9Fe 1-xCo xO 3 ceramicsen_US
dc.typeArticleen_US
dc.identifier.emailGao, J: jhgao@hku.hken_US
dc.identifier.authorityGao, J=rp00698en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4743013en_US
dc.identifier.scopuseid_2-s2.0-84865235210en_US
dc.identifier.hkuros212519-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84865235210&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume112en_US
dc.identifier.issue3en_US
dc.identifier.isiWOS:000308335400092-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridWang, SY=35328436600en_US
dc.identifier.scopusauthoridLiu, WF=38862343700en_US
dc.identifier.scopusauthoridGao, J=14021339900en_US
dc.identifier.scopusauthoridQiu, X=37117566100en_US
dc.identifier.scopusauthoridFeng, Y=37116990500en_US
dc.identifier.scopusauthoridHou, XG=55340711000en_US
dc.identifier.scopusauthoridYu, DS=55286002400en_US
dc.identifier.scopusauthoridLi, DJ=35744913400en_US

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