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Article: Energy shifts of Si oxidation states in the system of Si nanocrystals embedded in SiO 2 matrix

TitleEnergy shifts of Si oxidation states in the system of Si nanocrystals embedded in SiO 2 matrix
Authors
KeywordsCore-Level
Si Nanocrystal
X-Ray Photoemission
Issue Date2007
PublisherAmerican Scientific Publishers. The Journal's web site is located at http://aspbs.com/jnn/
Citation
Journal Of Nanoscience And Nanotechnology, 2007, v. 7 n. 7, p. 2506-2510 How to Cite?
AbstractEnergy shifts in the Si 2p levels of the five Si oxidation states Si n+ (n = 0, 1, 2, 3, 4) in the system of Si nanocrystals embedded in SiO 2 matrix have been determined. The thermal annealing effect on the energy shifts has been studied. The result suggests that the Si nanocrystals and the SiO 2 are thermally stable but the annealing can cause some structural deformations such as changes in the bond lengths and bond angles for the suboxides Si 2O and SiO. The energy shifts generally show a linear dependence on the oxidation state n, suggesting that the energy shifts could be mainly determined by the nearest-neighbor oxygen atoms. It is shown that the chemical structures of the system are similar to those of the conventional SiO 2/Si system in terms of the energy shifts. Copyright © 2007 American Scientific Publishers All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/175078
ISSN
2015 Impact Factor: 1.338
2015 SCImago Journal Rankings: 0.358
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChen, TPen_US
dc.contributor.authorLiu, Yen_US
dc.contributor.authorSun, CQen_US
dc.contributor.authorTseng, AAen_US
dc.contributor.authorFung, Sen_US
dc.date.accessioned2012-11-26T08:49:08Z-
dc.date.available2012-11-26T08:49:08Z-
dc.date.issued2007en_US
dc.identifier.citationJournal Of Nanoscience And Nanotechnology, 2007, v. 7 n. 7, p. 2506-2510en_US
dc.identifier.issn1533-4880en_US
dc.identifier.urihttp://hdl.handle.net/10722/175078-
dc.description.abstractEnergy shifts in the Si 2p levels of the five Si oxidation states Si n+ (n = 0, 1, 2, 3, 4) in the system of Si nanocrystals embedded in SiO 2 matrix have been determined. The thermal annealing effect on the energy shifts has been studied. The result suggests that the Si nanocrystals and the SiO 2 are thermally stable but the annealing can cause some structural deformations such as changes in the bond lengths and bond angles for the suboxides Si 2O and SiO. The energy shifts generally show a linear dependence on the oxidation state n, suggesting that the energy shifts could be mainly determined by the nearest-neighbor oxygen atoms. It is shown that the chemical structures of the system are similar to those of the conventional SiO 2/Si system in terms of the energy shifts. Copyright © 2007 American Scientific Publishers All rights reserved.en_US
dc.languageengen_US
dc.publisherAmerican Scientific Publishers. The Journal's web site is located at http://aspbs.com/jnn/en_US
dc.relation.ispartofJournal of Nanoscience and Nanotechnologyen_US
dc.subjectCore-Levelen_US
dc.subjectSi Nanocrystalen_US
dc.subjectX-Ray Photoemissionen_US
dc.titleEnergy shifts of Si oxidation states in the system of Si nanocrystals embedded in SiO 2 matrixen_US
dc.typeArticleen_US
dc.identifier.emailFung, S: sfung@hku.hken_US
dc.identifier.authorityFung, S=rp00695en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1166/jnn.2007.434en_US
dc.identifier.pmid17663272-
dc.identifier.scopuseid_2-s2.0-34548145203en_US
dc.identifier.hkuros242072-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-34548145203&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume7en_US
dc.identifier.issue7en_US
dc.identifier.spage2506en_US
dc.identifier.epage2510en_US
dc.identifier.isiWOS:000246347700041-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChen, TP=7405540443en_US
dc.identifier.scopusauthoridLiu, Y=36064444100en_US
dc.identifier.scopusauthoridSun, CQ=7404248313en_US
dc.identifier.scopusauthoridTseng, AA=7102916705en_US
dc.identifier.scopusauthoridFung, S=7201970040en_US
dc.identifier.citeulike1215952-

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