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Article: Photoluminescence of electron-and neutron-irradiated n-type 6H-SiC

TitlePhotoluminescence of electron-and neutron-irradiated n-type 6H-SiC
Authors
Keywords6H-SiC
Defects
Irradiation
LTPL
Issue Date2006
Citation
Pan Tao Ti Hsueh Pao/Chinese Journal Of Semiconductors, 2006, v. 27 SUPPL., p. 11-13 How to Cite?
Abstractn-type 6H-SiC materials irradiated with electrons having energies of Ee=1.7, 0.5, and 0.4 MeV and neutrons are studied via low temperature photoluminescence. For Ee ≥ 0.5 MeV electron-irradiated and neutron-irradiated samples, the LTPL emission lines S1/S2/S3 at 478.6/483.3/486. lnm are observed for the first time. Thermal annealing studies show that the defects S1/S2/S3 disappear at 500°C. However, the well-known D1-center is only detected for annealing temperatures over 700°C. By considering the threshold displacement energies of Emin(C) and Emin(Si) and thermal annealing behavior, it is found that the defects S1/S2/S3 are a set of silicon-related primary defects and the D1-center is a kind of secondary defect.
Persistent Identifierhttp://hdl.handle.net/10722/175059
ISSN
2011 SCImago Journal Rankings: 0.140
References

 

DC FieldValueLanguage
dc.contributor.authorZhong, Zen_HK
dc.contributor.authorGong, Men_HK
dc.contributor.authorWang, Oen_HK
dc.contributor.authorYu, Zen_HK
dc.contributor.authorYang, Zen_HK
dc.contributor.authorXu, Sen_HK
dc.contributor.authorChen, Xen_HK
dc.contributor.authorLing, Cen_HK
dc.contributor.authorFung, Hen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2012-11-26T08:49:02Z-
dc.date.available2012-11-26T08:49:02Z-
dc.date.issued2006en_HK
dc.identifier.citationPan Tao Ti Hsueh Pao/Chinese Journal Of Semiconductors, 2006, v. 27 SUPPL., p. 11-13en_HK
dc.identifier.issn0253-4177en_HK
dc.identifier.urihttp://hdl.handle.net/10722/175059-
dc.description.abstractn-type 6H-SiC materials irradiated with electrons having energies of Ee=1.7, 0.5, and 0.4 MeV and neutrons are studied via low temperature photoluminescence. For Ee ≥ 0.5 MeV electron-irradiated and neutron-irradiated samples, the LTPL emission lines S1/S2/S3 at 478.6/483.3/486. lnm are observed for the first time. Thermal annealing studies show that the defects S1/S2/S3 disappear at 500°C. However, the well-known D1-center is only detected for annealing temperatures over 700°C. By considering the threshold displacement energies of Emin(C) and Emin(Si) and thermal annealing behavior, it is found that the defects S1/S2/S3 are a set of silicon-related primary defects and the D1-center is a kind of secondary defect.en_HK
dc.languageengen_US
dc.relation.ispartofPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductorsen_HK
dc.subject6H-SiCen_HK
dc.subjectDefectsen_HK
dc.subjectIrradiationen_HK
dc.subjectLTPLen_HK
dc.titlePhotoluminescence of electron-and neutron-irradiated n-type 6H-SiCen_HK
dc.typeArticleen_HK
dc.identifier.emailXu, S: sjxu@hku.hken_HK
dc.identifier.emailLing, C: ccling@hkucc.hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityXu, S=rp00821en_HK
dc.identifier.authorityLing, C=rp00747en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-33847785374en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33847785374&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume27en_HK
dc.identifier.issueSUPPL.en_HK
dc.identifier.spage11en_HK
dc.identifier.epage13en_HK
dc.publisher.placeChinaen_HK
dc.identifier.scopusauthoridZhong, Z=8304932300en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK
dc.identifier.scopusauthoridWang, O=13611875800en_HK
dc.identifier.scopusauthoridYu, Z=7404347051en_HK
dc.identifier.scopusauthoridYang, Z=9248580600en_HK
dc.identifier.scopusauthoridXu, S=7404439005en_HK
dc.identifier.scopusauthoridChen, X=26642908200en_HK
dc.identifier.scopusauthoridLing, C=13310239300en_HK
dc.identifier.scopusauthoridFung, H=16033324300en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK

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