File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Photoluminescence and photoconductivity properties of copper-doped Cd 1-xZnxS nanoribbons

TitlePhotoluminescence and photoconductivity properties of copper-doped Cd 1-xZnxS nanoribbons
Authors
Issue Date2006
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nano
Citation
Nanotechnology, 2006, v. 17 n. 24, p. 5935-5940 How to Cite?
AbstractCopper-doped Cd1-xZnxS (x∼0.16) nanoribbons were prepared by controlled thermal evaporation of CdS, ZnS, and CuS powders onto Au-coated silicon substrates. The nanoribbons had a hexagonal wurtzite structure, and lengths of several tens to hundreds of micrometres, widths of 0.6-15νm, and thicknesses of 30-60nm. Cu doping and incorporation into the CdZnS lattice were identified and characterized by low-temperature photoluminescence (PL) and photoconductivity measurements. Temperature-dependent PL measurement showed that the PL spectra of both Cu-doped and undoped CdZnS nanoribbons have two emission peaks at 2.571 and 2.09eV, which are assigned to band edge emission and deep trap levels, respectively. In addition, the Cu-doped nanoribbons present two extra peaks at 2.448 and 2.41eV, which are attributed to delocalized and localized donor and acceptor states in the band gap of CdZnS resulting from Cu incorporation. Photoconductivity results showed the nanoribbons can be reversibly switched between low and high conductivity under pulsed illumination. The Cu-doped CdZnS nanoribbons showed four orders of magnitude larger photocurrent than the undoped ones. The current jumped from ∼2 × 10-12 to ∼5.7 × 10-7A upon white light illumination with a power density of ∼9mWcm-2. The present CdZnS:Cu nanoribbons may find applications in opto-electronic devices, such as solar cells, photoconductors, and chemical sensors. © IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/175048
ISSN
2015 Impact Factor: 3.573
2015 SCImago Journal Rankings: 1.196
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLui, TYen_US
dc.contributor.authorZapien, JAen_US
dc.contributor.authorTang, Hen_US
dc.contributor.authorMa, DDDen_US
dc.contributor.authorLiu, YKen_US
dc.contributor.authorLee, CSen_US
dc.contributor.authorLee, STen_US
dc.contributor.authorShi, SLen_US
dc.contributor.authorXu, SJen_US
dc.date.accessioned2012-11-26T08:48:57Z-
dc.date.available2012-11-26T08:48:57Z-
dc.date.issued2006en_US
dc.identifier.citationNanotechnology, 2006, v. 17 n. 24, p. 5935-5940en_US
dc.identifier.issn0957-4484en_US
dc.identifier.urihttp://hdl.handle.net/10722/175048-
dc.description.abstractCopper-doped Cd1-xZnxS (x∼0.16) nanoribbons were prepared by controlled thermal evaporation of CdS, ZnS, and CuS powders onto Au-coated silicon substrates. The nanoribbons had a hexagonal wurtzite structure, and lengths of several tens to hundreds of micrometres, widths of 0.6-15νm, and thicknesses of 30-60nm. Cu doping and incorporation into the CdZnS lattice were identified and characterized by low-temperature photoluminescence (PL) and photoconductivity measurements. Temperature-dependent PL measurement showed that the PL spectra of both Cu-doped and undoped CdZnS nanoribbons have two emission peaks at 2.571 and 2.09eV, which are assigned to band edge emission and deep trap levels, respectively. In addition, the Cu-doped nanoribbons present two extra peaks at 2.448 and 2.41eV, which are attributed to delocalized and localized donor and acceptor states in the band gap of CdZnS resulting from Cu incorporation. Photoconductivity results showed the nanoribbons can be reversibly switched between low and high conductivity under pulsed illumination. The Cu-doped CdZnS nanoribbons showed four orders of magnitude larger photocurrent than the undoped ones. The current jumped from ∼2 × 10-12 to ∼5.7 × 10-7A upon white light illumination with a power density of ∼9mWcm-2. The present CdZnS:Cu nanoribbons may find applications in opto-electronic devices, such as solar cells, photoconductors, and chemical sensors. © IOP Publishing Ltd.en_US
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nanoen_US
dc.relation.ispartofNanotechnologyen_US
dc.titlePhotoluminescence and photoconductivity properties of copper-doped Cd 1-xZnxS nanoribbonsen_US
dc.typeArticleen_US
dc.identifier.emailXu, SJ: sjxu@hku.hken_US
dc.identifier.authorityXu, SJ=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1088/0957-4484/17/24/006en_US
dc.identifier.scopuseid_2-s2.0-33846079221en_US
dc.identifier.hkuros124969-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33846079221&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume17en_US
dc.identifier.issue24en_US
dc.identifier.spage5935en_US
dc.identifier.epage5940en_US
dc.identifier.isiWOS:000242954700006-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridLui, TY=15760340200en_US
dc.identifier.scopusauthoridZapien, JA=6701453903en_US
dc.identifier.scopusauthoridTang, H=15761388600en_US
dc.identifier.scopusauthoridMa, DDD=36885336500en_US
dc.identifier.scopusauthoridLiu, YK=7410217865en_US
dc.identifier.scopusauthoridLee, CS=16464316100en_US
dc.identifier.scopusauthoridLee, ST=7601407495en_US
dc.identifier.scopusauthoridShi, SL=9532439000en_US
dc.identifier.scopusauthoridXu, SJ=7404439005en_US
dc.identifier.citeulike964107-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats