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Article: Impact of the cap layer on the electronic structures and optical properties of self-assembled InAs/GaAs quantum dots

TitleImpact of the cap layer on the electronic structures and optical properties of self-assembled InAs/GaAs quantum dots
Authors
Issue Date2006
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B - Condensed Matter And Materials Physics, 2006, v. 74 n. 20 How to Cite?
AbstractCap layer impact on the electronic structures and optical properties of self-assembled InAs/GaAs quantum dots is theoretically studied within the framework of Burt and Foreman's eight-band effective-mass Hamiltonian. A numerically stable finite difference scheme for this nonsymmetrized Hamiltonian and an efficient implementation of Jacobi-Davidson eigensolver for the resulting matrix are proposed. Our theoretical results show that as the cap layer thickness increases, the photoluminescence (PL) peak position exhibits a monotonous blueshift and the PL intensity enhances. These results are accounted for by the strain modified band edges and the space separation of electron and heavy-hole wave functions in the growth direction. Dot shape and size effects are also discussed. Our calculations are in good agreement with recent experimental findings. © 2006 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/175041
ISSN
2014 Impact Factor: 3.736
2015 SCImago Journal Rankings: 1.933
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorWu, HBen_US
dc.contributor.authorXu, SJen_US
dc.contributor.authorWang, Jen_US
dc.date.accessioned2012-11-26T08:48:54Z-
dc.date.available2012-11-26T08:48:54Z-
dc.date.issued2006en_US
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 2006, v. 74 n. 20en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://hdl.handle.net/10722/175041-
dc.description.abstractCap layer impact on the electronic structures and optical properties of self-assembled InAs/GaAs quantum dots is theoretically studied within the framework of Burt and Foreman's eight-band effective-mass Hamiltonian. A numerically stable finite difference scheme for this nonsymmetrized Hamiltonian and an efficient implementation of Jacobi-Davidson eigensolver for the resulting matrix are proposed. Our theoretical results show that as the cap layer thickness increases, the photoluminescence (PL) peak position exhibits a monotonous blueshift and the PL intensity enhances. These results are accounted for by the strain modified band edges and the space separation of electron and heavy-hole wave functions in the growth direction. Dot shape and size effects are also discussed. Our calculations are in good agreement with recent experimental findings. © 2006 The American Physical Society.en_US
dc.languageengen_US
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_US
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_US
dc.titleImpact of the cap layer on the electronic structures and optical properties of self-assembled InAs/GaAs quantum dotsen_US
dc.typeArticleen_US
dc.identifier.emailXu, SJ: sjxu@hku.hken_US
dc.identifier.authorityXu, SJ=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1103/PhysRevB.74.205329en_US
dc.identifier.scopuseid_2-s2.0-33751228431en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33751228431&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume74en_US
dc.identifier.issue20en_US
dc.identifier.isiWOS:000242409400073-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridWu, HB=16308513200en_US
dc.identifier.scopusauthoridXu, SJ=7404439005en_US
dc.identifier.scopusauthoridWang, J=37262424300en_US

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