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Article: Observation of a (√3 × √3)-R30° reconstruction on GaN(0 0 0 1) by RHEED and LEED

TitleObservation of a (√3 × √3)-R30° reconstruction on GaN(0 0 0 1) by RHEED and LEED
Authors
KeywordsLow-Energy Electron Diffraction
Surface Reconstructions
Issue Date2006
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/susc
Citation
Surface Science, 2006, v. 600 n. 14, p. 169-174 How to Cite?
AbstractA new reconstruction of √3 × √3-R30° has been observed on a GaN film grown on a 6H-SiC (0 0 0 1)-√3 × √3 surface using RHEED and LEED experimental techniques. The experimental LEED PF shows that the GaN film is Ga-terminated hexagonal. The surface is a mixture of two structures with a single bilayer height difference between them. One is a √3 × √3-R30° reconstruction with Ga-adatoms occupying the T4 sites. Another is a Ga-terminated 1 × 1 with no extra Ga on top. The area ratio of the √3 × √3 part to the 1 × 1 part is slightly larger than 1. The first principle total energy calculations and Tensor-LEED I-V curves simulations further confirm this structure model. © 2006 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/175023
ISSN
2015 Impact Factor: 1.931
2015 SCImago Journal Rankings: 0.792
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorWang, Jen_US
dc.contributor.authorSo, Ren_US
dc.contributor.authorLiu, Yen_US
dc.contributor.authorWu, Hen_US
dc.contributor.authorXie, MHen_US
dc.contributor.authorTong, SYen_US
dc.date.accessioned2012-11-26T08:48:49Z-
dc.date.available2012-11-26T08:48:49Z-
dc.date.issued2006en_US
dc.identifier.citationSurface Science, 2006, v. 600 n. 14, p. 169-174en_US
dc.identifier.issn0039-6028en_US
dc.identifier.urihttp://hdl.handle.net/10722/175023-
dc.description.abstractA new reconstruction of √3 × √3-R30° has been observed on a GaN film grown on a 6H-SiC (0 0 0 1)-√3 × √3 surface using RHEED and LEED experimental techniques. The experimental LEED PF shows that the GaN film is Ga-terminated hexagonal. The surface is a mixture of two structures with a single bilayer height difference between them. One is a √3 × √3-R30° reconstruction with Ga-adatoms occupying the T4 sites. Another is a Ga-terminated 1 × 1 with no extra Ga on top. The area ratio of the √3 × √3 part to the 1 × 1 part is slightly larger than 1. The first principle total energy calculations and Tensor-LEED I-V curves simulations further confirm this structure model. © 2006 Elsevier B.V. All rights reserved.en_US
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/suscen_US
dc.relation.ispartofSurface Scienceen_US
dc.rightsSurface Science. Copyright © Elsevier BV.-
dc.subjectLow-Energy Electron Diffractionen_US
dc.subjectSurface Reconstructionsen_US
dc.titleObservation of a (√3 × √3)-R30° reconstruction on GaN(0 0 0 1) by RHEED and LEEDen_US
dc.typeArticleen_US
dc.identifier.emailWu, H: hswu@hkucc.hku.hken_US
dc.identifier.emailXie, MH: mhxie@hku.hken_US
dc.identifier.authorityWu, H=rp00813en_US
dc.identifier.authorityXie, MH=rp00818en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.susc.2006.04.046en_US
dc.identifier.scopuseid_2-s2.0-33745818334en_US
dc.identifier.hkuros129591-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33745818334&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume600en_US
dc.identifier.issue14en_US
dc.identifier.spage169en_US
dc.identifier.epage174en_US
dc.identifier.isiWOS:000239317200001-
dc.publisher.placeNetherlandsen_US
dc.identifier.scopusauthoridWang, J=7701342266en_US
dc.identifier.scopusauthoridSo, R=10539096500en_US
dc.identifier.scopusauthoridLiu, Y=26643293600en_US
dc.identifier.scopusauthoridWu, H=7405584367en_US
dc.identifier.scopusauthoridXie, MH=7202255416en_US
dc.identifier.scopusauthoridTong, SY=24512624800en_US

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