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Article: Al/GaSb contact with slow positron beam

TitleAl/GaSb contact with slow positron beam
Authors
KeywordsAl/Gasb
Defect
Interface
Positron
Trapping
Issue Date2006
PublisherInstitute of Physics Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/cjcp
Citation
Chinese Journal Of Chemical Physics, 2006, v. 19 n. 2, p. 169-172 How to Cite?
AbstractAnnealing study of the Al/GaSb system was performed by using a slow positron beam and the measurement of X-ray diffraction. The S parameter against positron energy data were fitted by a three layer model (Al/interface/GaSb). It was found there was a ∼5 nm interfacial at the region between the Al layer and bulk in the sample of as-deposited. After the 400°C annealing, this interfacial region extends to over 40 nm and S parameter dramatically drops. This is possibly due to a new phase formation induced by the atoms' inter-diffusion at the interface. The annealing out of the open volume defects in the Al layer was revealed by the decrease of the S parameter and the increase of the effective diffusion length of the Al layer. Annealing behaviors of Sb and Lb, of the GaSb bulk showed the annealing out of positron traps at 250°C. However, further annealing at 400°C induces formation of positron traps, which are possibly another kind of V Ga-related defect and the positron shallow trap GaSb anti-site. The results of the X-ray diffraction experiment verified the conclusion of obtained by using positron technology. © 2006 Chinese Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/175022
ISSN
2015 Impact Factor: 0.496
2015 SCImago Journal Rankings: 0.877
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorWang, HYen_US
dc.contributor.authorWeng, HMen_US
dc.contributor.authorLing, CCen_US
dc.contributor.authorYe, BJen_US
dc.contributor.authorZhou, XYen_US
dc.date.accessioned2012-11-26T08:48:48Z-
dc.date.available2012-11-26T08:48:48Z-
dc.date.issued2006en_US
dc.identifier.citationChinese Journal Of Chemical Physics, 2006, v. 19 n. 2, p. 169-172en_US
dc.identifier.issn1674-0068en_US
dc.identifier.urihttp://hdl.handle.net/10722/175022-
dc.description.abstractAnnealing study of the Al/GaSb system was performed by using a slow positron beam and the measurement of X-ray diffraction. The S parameter against positron energy data were fitted by a three layer model (Al/interface/GaSb). It was found there was a ∼5 nm interfacial at the region between the Al layer and bulk in the sample of as-deposited. After the 400°C annealing, this interfacial region extends to over 40 nm and S parameter dramatically drops. This is possibly due to a new phase formation induced by the atoms' inter-diffusion at the interface. The annealing out of the open volume defects in the Al layer was revealed by the decrease of the S parameter and the increase of the effective diffusion length of the Al layer. Annealing behaviors of Sb and Lb, of the GaSb bulk showed the annealing out of positron traps at 250°C. However, further annealing at 400°C induces formation of positron traps, which are possibly another kind of V Ga-related defect and the positron shallow trap GaSb anti-site. The results of the X-ray diffraction experiment verified the conclusion of obtained by using positron technology. © 2006 Chinese Physical Society.en_US
dc.languageengen_US
dc.publisherInstitute of Physics Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/cjcpen_US
dc.relation.ispartofChinese Journal of Chemical Physicsen_US
dc.subjectAl/Gasben_US
dc.subjectDefecten_US
dc.subjectInterfaceen_US
dc.subjectPositronen_US
dc.subjectTrappingen_US
dc.titleAl/GaSb contact with slow positron beamen_US
dc.typeArticleen_US
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_US
dc.identifier.authorityLing, CC=rp00747en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1360/cjcp2006.19(2).169.4en_US
dc.identifier.scopuseid_2-s2.0-33745744810en_US
dc.identifier.hkuros242879-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33745744810&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume19en_US
dc.identifier.issue2en_US
dc.identifier.spage169en_US
dc.identifier.epage172en_US
dc.identifier.isiWOS:000237684100017-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridWang, HY=7501740999en_US
dc.identifier.scopusauthoridWeng, HM=7102468725en_US
dc.identifier.scopusauthoridLing, CC=13310239300en_US
dc.identifier.scopusauthoridYe, BJ=7102338554en_US
dc.identifier.scopusauthoridZhou, XY=7410093961en_US

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