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Article: Mass transport and alloying during InN growth on GaN by molecular-beam epitaxy

TitleMass transport and alloying during InN growth on GaN by molecular-beam epitaxy
Authors
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2006, v. 88 n. 22 How to Cite?
AbstractDuring Stranski-Krastanov (SK) growth of InN on GaN by molecular-beam epitaxy, a mass transport is noted from the two-dimensional wetting layer and/or the surface excess metal adlayers to the SK islands when the excess nitrogen flux is used for deposition. The extent of mass transport depends on the material coverage. For growth under the excess indium flux condition, no such mass transport is observed. © 2006 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/175017
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLiu, Yen_US
dc.contributor.authorXie, MHen_US
dc.contributor.authorWu, HSen_US
dc.contributor.authorTong, SYen_US
dc.date.accessioned2012-11-26T08:48:47Z-
dc.date.available2012-11-26T08:48:47Z-
dc.date.issued2006en_US
dc.identifier.citationApplied Physics Letters, 2006, v. 88 n. 22en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/175017-
dc.description.abstractDuring Stranski-Krastanov (SK) growth of InN on GaN by molecular-beam epitaxy, a mass transport is noted from the two-dimensional wetting layer and/or the surface excess metal adlayers to the SK islands when the excess nitrogen flux is used for deposition. The extent of mass transport depends on the material coverage. For growth under the excess indium flux condition, no such mass transport is observed. © 2006 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleMass transport and alloying during InN growth on GaN by molecular-beam epitaxyen_US
dc.typeArticleen_US
dc.identifier.emailXie, MH: mhxie@hku.hken_US
dc.identifier.emailWu, HS: hswu@hkucc.hku.hken_US
dc.identifier.authorityXie, MH=rp00818en_US
dc.identifier.authorityWu, HS=rp00813en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.2209210en_US
dc.identifier.scopuseid_2-s2.0-33744814618en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33744814618&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume88en_US
dc.identifier.issue22en_US
dc.identifier.isiWOS:000238001900034-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridLiu, Y=26643293600en_US
dc.identifier.scopusauthoridXie, MH=7202255416en_US
dc.identifier.scopusauthoridWu, HS=7405584367en_US
dc.identifier.scopusauthoridTong, SY=24512624800en_US

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