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Article: Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers

TitleBand gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers
Authors
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2006, v. 88 n. 4, p. 1-3 How to Cite?
AbstractThe optical properties of two kinds of InGaNGaN quantum-wells light emitting diodes, one of which was doped with Si in barriers while the other was not, are comparatively investigated using time-integrated photoluminescence and time-resolved photoluminescence techniques. The results clearly demonstrate the coexistence of the band gap renormalization and phase-space filling effect in the structures with Si doped barriers. It is surprisingly found that photogenerated carriers in the intentionally undoped structures decay nonexponentially, whereas carriers in the Si doped ones exhibit a well exponential time evolution. A new model developed by O. Rubel, S. D. Baranovskii, K. Hantke, J. D. Heber, J. Koch, P. Thomas, J. M. Marshall, W. Stolz, and W. H. Rühle [J. Optoelectron. Adv. Mater. 7, 115 (2005)] was used to simulate the decay curves of the photogenerated carriers in both structures, which enables us to determine the localization length of the photogenerated carriers in the structures. It is found that the Si doping in the barriers not only leads to remarkable many-body effects but also significantly affects the carrier recombination dynamics in InGaNGaN layered heterostructures. © 2006 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/174994
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorWang, YJen_US
dc.contributor.authorXu, SJen_US
dc.contributor.authorLi, Qen_US
dc.contributor.authorZhao, DGen_US
dc.contributor.authorYang, Hen_US
dc.date.accessioned2012-11-26T08:48:41Z-
dc.date.available2012-11-26T08:48:41Z-
dc.date.issued2006en_US
dc.identifier.citationApplied Physics Letters, 2006, v. 88 n. 4, p. 1-3en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/174994-
dc.description.abstractThe optical properties of two kinds of InGaNGaN quantum-wells light emitting diodes, one of which was doped with Si in barriers while the other was not, are comparatively investigated using time-integrated photoluminescence and time-resolved photoluminescence techniques. The results clearly demonstrate the coexistence of the band gap renormalization and phase-space filling effect in the structures with Si doped barriers. It is surprisingly found that photogenerated carriers in the intentionally undoped structures decay nonexponentially, whereas carriers in the Si doped ones exhibit a well exponential time evolution. A new model developed by O. Rubel, S. D. Baranovskii, K. Hantke, J. D. Heber, J. Koch, P. Thomas, J. M. Marshall, W. Stolz, and W. H. Rühle [J. Optoelectron. Adv. Mater. 7, 115 (2005)] was used to simulate the decay curves of the photogenerated carriers in both structures, which enables us to determine the localization length of the photogenerated carriers in the structures. It is found that the Si doping in the barriers not only leads to remarkable many-body effects but also significantly affects the carrier recombination dynamics in InGaNGaN layered heterostructures. © 2006 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleBand gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriersen_US
dc.typeArticleen_US
dc.identifier.emailXu, SJ: sjxu@hku.hken_US
dc.identifier.authorityXu, SJ=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.2168035en_US
dc.identifier.scopuseid_2-s2.0-31544476840en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-31544476840&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume88en_US
dc.identifier.issue4en_US
dc.identifier.spage1en_US
dc.identifier.epage3en_US
dc.identifier.isiWOS:000234968600026-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridWang, YJ=8296286800en_US
dc.identifier.scopusauthoridXu, SJ=7404439005en_US
dc.identifier.scopusauthoridLi, Q=7405861869en_US
dc.identifier.scopusauthoridZhao, DG=7403489944en_US
dc.identifier.scopusauthoridYang, H=10638776900en_US

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