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Article: Thermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet density

TitleThermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet density
Authors
Issue Date2005
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2005, v. 98 n. 8 How to Cite?
AbstractVariable-temperature photoluminescence (PL) spectra of Si-doped self-assembled InGaAs quantum dots (QDs) with and without GaAs cap layers were measured. Narrow and strong emission peak at 1075 nm and broad and weak peak at 1310 nm were observed for the buried and surface QDs at low temperature, respectively. As large as 210 meV redshift of the PL peak of the surface QDs with respect to that of the buried QDs is mainly due to the change of the strain around QDs before and after growth of the GaAs cap layer. Using the developed localized-state luminescence model, we quantitatively calculate the temperature dependence of PL peaks and integrated intensities of the two samples. The results reveal that there exists a large difference in microscopic mechanisms of PL thermal quenching between two samples. © 2005 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/174976
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorWei, ZFen_US
dc.contributor.authorXu, SJen_US
dc.contributor.authorDuan, RFen_US
dc.contributor.authorLi, Qen_US
dc.contributor.authorWang, Jen_US
dc.contributor.authorZeng, YPen_US
dc.contributor.authorLiu, HCen_US
dc.date.accessioned2012-11-26T08:48:28Z-
dc.date.available2012-11-26T08:48:28Z-
dc.date.issued2005en_US
dc.identifier.citationJournal Of Applied Physics, 2005, v. 98 n. 8en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/174976-
dc.description.abstractVariable-temperature photoluminescence (PL) spectra of Si-doped self-assembled InGaAs quantum dots (QDs) with and without GaAs cap layers were measured. Narrow and strong emission peak at 1075 nm and broad and weak peak at 1310 nm were observed for the buried and surface QDs at low temperature, respectively. As large as 210 meV redshift of the PL peak of the surface QDs with respect to that of the buried QDs is mainly due to the change of the strain around QDs before and after growth of the GaAs cap layer. Using the developed localized-state luminescence model, we quantitatively calculate the temperature dependence of PL peaks and integrated intensities of the two samples. The results reveal that there exists a large difference in microscopic mechanisms of PL thermal quenching between two samples. © 2005 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleThermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet densityen_US
dc.typeArticleen_US
dc.identifier.emailXu, SJ: sjxu@hku.hken_US
dc.identifier.authorityXu, SJ=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.2112176en_US
dc.identifier.scopuseid_2-s2.0-27744555242en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-27744555242&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume98en_US
dc.identifier.issue8en_US
dc.identifier.isiWOS:000232937500065-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridWei, ZF=7402259042en_US
dc.identifier.scopusauthoridXu, SJ=7404439005en_US
dc.identifier.scopusauthoridDuan, RF=7101980558en_US
dc.identifier.scopusauthoridLi, Q=7405861869en_US
dc.identifier.scopusauthoridWang, J=37262424300en_US
dc.identifier.scopusauthoridZeng, YP=7402981672en_US
dc.identifier.scopusauthoridLiu, HC=35240645300en_US

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